Search

The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is demonstrated to efficiently increase the device density. Though electrochemical migration (ECM) resistive random access (RRAM) has the advantage of low power consumption, the stability of the operating voltage requires further improvements due to filament expansions and deterioration. In this work, 3D‐VRRAM arrays are designed. Two‐layered RRAM cells, with one inert and one active sidewall electrode stacked at a cross‐point, are constructed, where the thin film sidewall electrode in the VRRAM structure is beneficial for confining the expansions of the conducting filaments. Thus, the top cell (Pt/ZnO/Pt) and the bottom cell (Ag/ZnO/Pt) in the VRRAM structure, which are switched by different mechanisms, can be analyzed at the same time. The oxygen vacancy filaments in the Pt/ZnO/Pt cell and Ag filaments in the Ag/ZnO/Pt cell are verified. The 40 nm thickness sidewall electrode restricts the filament size to nanoscale, which demonstrates the stability of the operating voltages. Additionally, the 0.3 V operating voltage of Ag/ZnO/Pt ECM VRRAM demonstrates the potential of low power consumption of VRRAM arrays in future applications. [ABSTRACT FROM AUTHOR]