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— The exo-electron currents from a ACPDP test panel with or without MgO crystals sprayed on MgO film were measured directly after eliminating of the wall-voltage effect. An inverse relationship was established between the statistical delay time and exo-electron currentfrom the MgO cathode film. The spraying of MgO crystals on MgO thin film was observed to reduce the statistical delay time dramatically even for the same exo-electron currents measured. The shift of the inverse curve may be attributed to an increased discharge success probability by the MgO crystals sprayed.

In this study, we attempted to understand the temperature dependence of statistical delay of ac-PDPs. Two theoretical models, Auger mechanism of thermal excitation and Tunneling model, were used to predict the temperature and time dependency of exo-electron currents. In the Auger mechanism model, a distributed source of trapped electrons was used. The theoretical prediction from the Auger model showed a significant discrepancy from the experimentally measured results from the panels with MgO nano-cube powder coating. The tunneling model seems to describe the exo-electron currents from MgO nano-cube powders better.

The relationship between IR and VUV emission was investigated in an opposed PDP discharge at high Xe content and high voltage levels. The ratio of VIS/IR and the ratio of Efficacy/VIS/IR were determined to analyze the behavior of the xenon excitation efficiency and the electron excitation efficiency as a function of driving voltage and xenon content. We see that the xenon excitation efficiency is almost independent from the driving voltage, and is increasing approximately linearly with the xenon partial pressure.

The effect of the MgO crystal structure on the addressing discharge jitter in SMPDP is investigated. By varying the oxygen pressure during E-beam deposition, different MgO crystal structure was made, as analyzed by XRD. The jitter time in a PDP panel was measured for isolated On-pixels at low intensity levels. The conclusion is that the jitter time can be decreased by maximizing the relative (200)/(111) peak ratio, obtained by decreasing the O2 addition during E-Beam MgO deposition.

Photoluminescence (PL) spectra were recorded for doped MgO crystals, irradiated by VUV light (λ=147nm, hv=8.4eV) in vacuum at room temperature. The emission band between 200 nm and 800nm was observed. Two strong emission peaks are found, one around 330nm and one centered at about 700nm. We assume that the 330nm peak is a recombination emission peak, while the 700nm peak is supposed to be related to hole traps. The crystals were then baked in air for 1h at 150°C, 450°C and 800°C, after which the samples were studied with PL analysis. The trend is that the recombination peak around 330nm increases with baking temperature, suggesting that the heat-cleaning treatment improves the recombination emission characteristics of doped MgO crystals.

A comparative study of photoluminescence and thermoluminescence for both pure and doped MgO poly-crystals has been performed. for pure MgO, a red emission band at 730nm can be observed under VUV light excitation. The doped MgO exhibits a strong emission at 650 nm excited by the VUV or 250 nm light. After exposure to VUV radiation, a strong TL peak corresponding to red emission band can be detected in the temperature range of 20°C–250°C for both doped and undoped MgO. Using Hoogenstraaten's heating rate method, a trap depth of 0.31 eV can be obtained for pure MgO. The trap depth in doped MgO is about 0.51 eV and shifts to high energy level due to the addition of the doping element.