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Abstract Aflatoxin, mainly produced by Aspergillus flavus, is one of the most notorious mycotoxin for its toxicity and carcinogenicity. Despite extensive efforts, effective strategies to control A. flavus and AFB1 contamination remain elusive. Here, we investigate the potential of p‐anisaldehyde (AS), an aldehyde derived from plant essential oils, as a natural antifungal agent against A. flavus and its ability to modulate AFB1 biosynthesis. We found that AS exhibited broad‐spectrum antifungal activities against Aspergillus spp. and effectively inhibited A. flavus asexual development, AFB1 production, and pathogenicity. AS treatment disrupted the cell surface structure and membrane integrity, as observed by scanning electron microscopy and PI staining. RNA‐sequencing analysis revealed that AS significantly altered the expression of genes involved in redox homeostasis, plasma membrane function, and cell cycle progression. Further investigation demonstrated that AS induced a reduction in mitochondrial membrane potential (Δψm) and accumulation of reactive oxygen species (ROS), leading to cell cycle arrest at the G2/M phase. The AS‐induced ROS accumulation was found to be mitigated by the superoxide dismutase‐mediated antioxidant system, which is regulated by transcriptional factor Ap1. Notably, the Ap1‐regulatory ROS detoxification system was also found to be involved in A. flavus pathogenicity and AFB1 production. Overall, these findings provide valuable insights into the inhibitory mechanism of AS against A. flavus, paving the way for its potential application as a natural strategy to mitigate AFB1 contamination in both food and agriculture crops.

Objective The effectiveness of arthroscopic rotator cuff repair (ARCR) on rheumatoid arthritis (RA) patients remains a controversial topic. This study investigates the mid‐term outcomes of ARCR in RA patients and identifies the factors influencing clinical efficacy. Methods This retrospective study enrolled RA patients with small or medium rotator cuff tears (RCTs) between February 2014 and February 2019. Visual Analog Scale (VAS), American Shoulder and Elbow Surgeons (ASES), and Constant–Murley scores were collected at each follow‐up time. Ultimately, magnetic resonance imaging (MRI) and X‐ray were employed to assess rotator cuff integrity and progression of shoulder bone destruction, respectively. Statistical methods used two‐way repeated‐measures ANOVA or generalized estimation equations. Results A total of 157 patients were identified and divided into ARCR (n = 75) and conservative treatment (n = 82) groups. ARCR group continued to be divided into small tear (n = 35) and medium tear (n = 40) groups. At the final, all scores were better in ARCR group than in the conservative treatment group (p 0.05). Radiographic assessment of the final follow‐up demonstrated that the progression rate in the small tear group (8.57%) was significantly lower than that in the medium group (27.50%, p

Abstract Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe‐like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10−4–10−3. This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less‐distorted octahedral‐like atomic configurations across the Sb/SiO2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively‐miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially.

Abstract With the development of blue laser endoscopy (BLE) technique, it's often used to diagnose early gastric cancer (EGC) by the morphological changes of blood vessels through BLE. However, EGC is still not obvious to identify, resulting in a high rate of missed diagnosis. Molecular imaging can show the changes in early tumors at molecular level, which provides a possibility for diagnosing EGC. Therefore, developing a probe that visually monitors blood vessels of EGC under BLE is particularly necessary. Herein, a bis‐pyrene (BP) based nanoprobe (BP‐FFVLK‐(PEG)‐RGD, M1) is designed, which can target angiogenesis and self‐assemble into fibers in situ, resulting in stable and long‐term retention in tumor. Moreover, M1 probe can emit yellow‐green fluorescence for imaging under BLE. M1 probe is confirmed to steadily remain in tumor for up to 96 hours in mice transplanted subcutaneously. In addition, the M1 probe is able to target angiogenesis for molecular imaging of isolated human gastric cancer tissue under BLE. Finally, M1 probe i.v. injected into primary gastric cancer model rabbits successfully highlighted the tumor site under BLE, which is confirmed by pathological analysis. It's the first time to develop a probe for diagnosing EGC by visualizing angiogenesis under BLE, showing great clinical significance.

Abstract Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale. As a result, the miniaturization of ferroelectric devices was hindered, which makes ferroelectric memory unable to keep up with the development of integrated‐circuit (IC) miniaturization. Recently, a two‐dimensional (2D) In2Se3 was reported to maintain stable ferroelectricity at the ultrathin scale, which is expected to break through the bottleneck of miniaturization. Soon, devices based on 2D In2Se3, including the ferroelectric field‐effect transistor, ferroelectric channel transistor, synaptic ferroelectric semiconductor junction, and ferroelectric memristor were demonstrated. However, a comprehensive understanding of the structures and the ferroelectric‐switching mechanism of 2D In2Se3 is still lacking. Here, the atomic structures of different phases, the dynamic mechanism of ferroelectric switching, and the performance/functions of the latest devices of 2D In2Se3 are reviewed. Furthermore, the correlations among the structures, the properties, and the device performance are analyzed. Finally, several crucial problems or challenges and possible research directions are put forward. We hope that this review paper can provide timely knowledge and help for the research community to develop 2D In2Se3 based ferroelectric memory and computing technology for practical industrial applications.

Objective To confirm the role of long noncoding RNA differentiation antagonizing non‐protein coding RNA (DANCR) in chondrocyte inflammatory injury in osteoarthritis (OA) in vitro, as well as its molecular mechanism. Methods Human primary chondrocytes were treated with lipopolysaccharide (LPS) to construct a chondrocyte inflammatory injury in human OA cell model. Gene expression was detected using real‐time quantitative polymerase chain reaction. Cell inflammatory injury was evaluated by Cell Counting Kit‐8 assay, flow cytometry, and enzyme‐linked immunosorbent assay. The interplay between miRNA‐19a‐3p (miR‐19a) and DANCR was validated by dual‐luciferase reporter assay and RNA immunoprecipitation. Results Expression of DANCR was upregulated, and miR‐19a was downregulated in human OA cartilage and LPS‐treated primary chondrocytes in vitro. Moreover, DANCR expression was inversely correlated with miR‐19a in OA patients. LPS reduced cell viability and increased the apoptotic rate and secretion of interleukin (IL)‐1β, IL‐6, IL‐8, as well as tumor necrosis factor (TNF)‐α in primary chondrocyte cells in vitro, suggesting an inflammatory injury model of OA. Functionally, knockdown of DANCR could attenuate LPS‐induced apoptosis and inflammatory response, as evidenced by improved cell viability, and reduced apoptotic rate and products of IL‐1β, IL‐6, IL‐8, and TNF‐α. Notably, DANCR negatively regulated miR‐19a expression, presumably via sponging. Furthermore, miR‐19a deletion eliminated the effect of DANCR knockdown on apoptosis and the inflammatory response of primary chondrocytes under LPS stress. Conclusion Differentiation antagonizing non‐protein coding RNA silencing could protect human chondrocyte cells against LPS‐induced inflammatory injury and apoptosis through targeting miR‐19a, suggesting a vital role of the DANCR/miR‐19a axis in OA.

Abstract One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage.

The effect of trace amount of Ga on the inoxidizability and wettability of Sn-0.5Ag-0.7Cu-0.05Pr solders was investigated systematically by means of microstructure characterizations. The results indicate that the wettability and oxidation resistance properties are remarkably improved with addition of trace amount of Ga. Moreover, it is observed that the trace amount of Ga in Sn-0.5Ag-0.7Cu-0.05Pr solders refines the matrix microstructure. The relationship between wettability and oxidation resistance was put into deep study. And Ga was found to be enriched on the surface of the molten solder, which benefited the properties correspondingly. The results of this study can stimulate the use of low-silver Sn-Ag-Cu-Pr solders for various applications.