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7 results on '"Toru Ujihara"'

4. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Author

Toru Ujihara, Atsushi Tanaka, Hiroshi Amano, Syo Inotsume, Yoshio Honda, Shunta Harada, and Kenji Hanada

Subjects
Thesaurus (information retrieval), chemistry.chemical_compound, Birefringence, Materials science, chemistry, business.industry, Optoelectronics, Gallium nitride, Dislocation, Condensed Matter Physics, business, Electronic, Optical and Magnetic Materials
Published
2020
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5. Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

Author

Nobuhiko Kokubo, Shunta Harada, Toru Ujihara, Jun Kojima, Hisashi Yamada, Miho Tagawa, Junji Ohara, Shoichi Onda, and Sho Inotsume

Subjects
Threading dislocations, symbols.namesake, Materials science, business.industry, symbols, Optoelectronics, Substrate (electronics), Condensed Matter Physics, Epitaxy, business, Raman spectroscopy, Layer (electronics), Electronic, Optical and Magnetic Materials
Published
2020
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6. The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide

Author

Takashi Horiuchi, Atsushi Sekimoto, Yasunori Okano, Sadik Dost, Takuya Yamamoto, Toru Ujihara, and Lei Wang

Subjects
chemistry.chemical_compound, Materials science, chemistry, Silicon carbide, Single crystal silicon, Crucible, General Materials Science, Seeding, General Chemistry, Composite material, Condensed Matter Physics, Rotation, Carbide
Published
2019
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7. Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates

Author

Tsutomu Nakanishi, Takanori Koshikawa, Hiromichi Horinaka, Tsuneo Yasue, Naoto Yamamoto, Shoji Okumi, Yoshikazu Takeda, Atsushi Mano, Yuta Nakagawa, Xiuguang Jin, T. Kato, Masatoshi Tanioku, Takashi Saka, Tetsuya Matsuyama, Toru Ujihara, and Masahiro Yamamoto

Subjects
Diffraction, Materials science, business.industry, Surfaces and Interfaces, Substrate (electronics), Crystal structure, Condensed Matter Physics, Mosaicity, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Crystallography, Zigzag, Ultimate tensile strength, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, Anisotropy, business, Layer (electronics)
Abstract

The crystalline structure of GaAsP layers grown on GaAs and GaP (001) substrates, used for spin polarized photocathodes, has been investigated by X-ray diffraction. The layers on the GaAs substrate possess a mosaic structure observable by X-ray topography and consist of many large blocks. The mosaicity anisotropic and the distribution of the mosaic is restricted within the (110) plane, and the blocks zigzag around the [110] direction. The layer grown on the GaP substrate was uniform and no mosaic was observed in the topographs. The results indicate that different mechanisms of strain release occur in GaAsP layers for tensile and compressive strains.

Published
2009
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