1. Effect of substrate temperature on ZnO thin film fabrication by using an atmospheric pressure cold plasma generator
- Author
-
Akiou Kawaguchi, Takehiko Murase, Tomokazu Shikama, Toshifumi Yuji, Dong-Bum Shin, Yoshifumi Suzaki, and Yoon-Kee Kim
- Subjects
Materials science ,Atmospheric pressure ,law ,Electrical resistivity and conductivity ,Transmittance ,Analytical chemistry ,Substrate (electronics) ,Plasma ,Thin film ,Condensed Matter Physics ,Microstructure ,Cathode ,law.invention - Abstract
Under atmospheric pressure, homogeneous non-equilibrium cold plasma was generated stably by high voltage pulsed power (1 kV, 20 kHz) excitation of He and O2 gases. By feeding Zn-MOPD (C18H30O6Zn) into this plasma with He carrier gas, transparent flat ZnO films about 240 nm thick were successfully fabricated on glass substrates directly under a slit made into the cathode. Transmittance of the film is about 80% in the wavelength range from 400 to 600 nm. An XRD measurement revealed that these ZnO films had a c-axis oriented polycrystalline structure. By increasing the substrate temperature from 250 to 400 °C, electrical resistivity of the film decreased from 0.42 Ωm to 9.4 × 10–4 Ωm. A high temperature of the substrate may change the growth pattern of ZnO film and its microstructure. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Published
- 2010