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Abstract Two‐dimensional material‐based field‐effect transistors (2DM‐FETs) are playing a revolutionary role in electronic devices. However, before electronic design automation (EDA) for 2DM‐FETs can be achieved, it remains necessary to determine how to incorporate contact transports into model. Reported methods compromise between physical intelligibility and model compactness due to the heterojunction nature. To address this, quasi‐Fermi‐level phase space theory (QFLPS) is generalized to incorporate contact transports using the Landauer formula. It turns out that the Landauer‐QFLPS model effectively overcomes the issue of concern. The proposed new formula can describe 2DM‐FETs with Schottky or Ohmic contacts with superior accuracy and efficiency over previous methods, especially when describing non‐monotonic drain conductance characteristics. A three‐bit threshold inverter quantizer (TIQ) circuit is fabricated using ambipolar black phosphorus and it is demonstrated that the model accurately predicts circuit performance. The model could be very effective and valuable in the development of 2DM‐FET‐based integrated circuits.

Abstract Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb‐containing materials, oxide electrode, and limited thermal stability. Here, high‐performance flexible nonvolatile memories based on ferroelectric Hf0.5Zr0.5O2 (HZO) via quasi‐van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm−2 without a wake‐up effect during cycling, but also remarkably robust mechanical properties, degradation‐free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin‐film transistors with a low operating voltage of ±3 V, high on/off ratio of 6.5 × 105, and a small subthreshold slope of about 100 mV dec−1, which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next‐generation of wearable, low‐power, and nonvolatile memories with manufacturability and scalability.