1. Carrier storage in Ge nanoparticles produced by pulsed laser deposition
- Author
-
Martín-Sánchez, Javier, Chahboun, A., Gomes, M. J. M., Rolo, A. G., Pivac, B., Capan, I., and Universidade do Minho
- Subjects
Science & Technology ,Germanium ,Charge trapping ,germanium ,nanoparticles ,pulsed laser deposition ,charge trapping ,Nanoparticles ,Pulsed laser deposition - Abstract
In this work, we report on the electrical characterization of Ge nanoparticles (NPs) produced by pulsed laser deposition (PLD) at room temperature (RT) in Ar gas inert atmosphere using a shadowed off-axis deposition geometry. Our results show that functional thin films of crystalline Ge NPs embedded between thin alumina films can be obtained on p-type Si(100) substrates following a low temperature and short rapid thermal annealing (RTA) treatment. Metal–oxide–semiconductor (MOS) structures with and without Ge NPs embedded in the alumina were prepared for the electrical measurements. The results indicate a strong memory effect at relatively low programming voltages (±4 V) due to the presence of Ge NPs., Fundação para a Ciência e a Tecnologia (FCT) - PTDC/FIS/70194/2006, SFRH/BPD/64850/2009 (FCT grant), COMPETE, COST MP0901-NanoTP Action, Cooperation program (FCT-CNRST)-2010/2012, Ref. 441.00
- Published
- 2012