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1. LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Author

di Forte Poisson, M.‐A., primary, Sarazin, N., additional, Magis, M., additional, Tordjman, M., additional, Di Persio, J., additional, Langer, R., additional, Iliopoulos, E., additional, Georgakilas, A., additional, Kominou, P., additional, Guziewicz, M., additional, Kaminska, E., additional, Piotrowska, A., additional, Gaquière, C., additional, Oualli, M., additional, Chartier, E., additional, Morvan, E., additional, and Delage, S., additional

Published
2010
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