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This work reports on the relationship between structure and dielectric properties of biaxially oriented polypropylene. The morphology of semicrystalline bioriented isotactic polypropylene films is investigated using wide angle X-ray diffraction and Polarized Optical Microscopy. A b-orthorhombic structure, with a crystallinity ratio of about 46%, and “Crater” morphology of the b-form is identified. Dielectric properties are measured by Broadband Dielectric Spectroscopy over a wide temperature range (2150 to 1258C). Since the dissipation factor of the PP is very low, special care was taken to obtain valid data. Two main relaxation processes are observed: a a-relaxation peak associated to the glass transition temperature (Tg) at temperature about 278C, and a broad b*-relaxation at about 2608C, partly attributed to CH orientation. The variation of the dissipation factor versus sample thickness (from 3.8 to 11.8 mm) is correlated and partly explained by the increase of crystallinity ratio and lamella size at larger thicknesses. It comes out that the thinnest film seems perfectly meet the application requesting, namely lowest dissipation factor and highest permittivity.

The dielectric properties of two grades of bi-oriented isotactic polypropylene were studied with a variety of techniques: breakdown field measurements, dielectric spectroscopy, thermally stimulated depolarization currents (Is), and direct-current (dc) conduction I values. Standard polypropylene (STPP) and high-crystallinity polypropylene (HCPP) films were investigated. Measurements were carried out over a wide temperature range (2150C/1125C). The breakdown fields in both materials showed a very small difference. On the other hand, the dielectric losses and dc conduction I values were significantly lower in HCPP. Both materials showed a decrease in the dielectric loss versus temperature in the range 20–90C; this is favorable for application in alternating-current power capacitors. The analysis of the dc I value allowed us to find evidence of two main conduction mechanisms: (1) below 80C in both materials, a hopping mechanism due to the motion of electrons occurred in the amorphous phase, and (2) above 80C, ionic conduction occurred in HCPP, and hopping conduction occurred in STPP.