104 results on '"Monemar B"'
Search Results
2. Optical properties of InN/In 0.73 Ga 0.27 N multiple quantum wells studied by spectroscopic ellipsometry
3. Mg‐related acceptors in GaN
4. Magnetic characterization of conductance electrons in GaN
5. ChemInform Abstract: Basic III-V Nitride Research - Past, Present and Future
6. HVPE GaN substrates: growth and characterization
7. Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2 O3
8. Tunneling effects in short period strained AlN/GaN superlattices
9. Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces
10. Recombination of free and bound excitons in GaN
11. Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: optical evidences for a reduced stacking fault density
12. Strain and compositional analyses of Al‐rich Al1– xInxN films grown by MOVPE: impact on the applicability of Vegard's rule
13. Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells [phys. stat. sol. (b) 244, No. 5, 1727–1734 (2007)]
14. Nonpolar a ‐ and m ‐plane bulk GaN sliced from boules: structural and optical characteristics
15. Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire
16. Two-electron transition spectroscopy of shallow donors in bulk GaN
17. Localized plasmons at pores and clusters within inhomogeneous indium nitride films
18. Effects of non‐stoichiometry and compensation on fundamental parameters of heavily‐doped InN
19. Bending in HVPE grown GaN films: origin and reduction possibilities
20. Recent developments in the III‐nitride materials
21. Optical observation of discrete well width fluctuations in wide band gap III‐nitride quantum wells
22. Phonons in strained AlGaN/GaN superlattices
23. Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures
24. The dominant shallow 0.225 eV acceptor in GaN
25. Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN
26. Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells
27. Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers
28. Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers
29. Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing
30. Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing
31. Electron concentration and mobility profiles in InN layers grown by MBE
32. Strain ina-plane GaN layers grown onr-plane sapphire substrates
33. III–V/II–VI heterovalent double quantum wells
34. Optical properties of InN related to surface plasmons
35. Photoluminescence of GaN/AlN superlattices grown by MOCVD
36. Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells
37. Nonpolar a ‐plane HVPE GaN: growth and in‐plane anisotropic properties
38. Positron annihilation study of HVPE grown thick GaN layers
39. Temperature‐dependent polarized luminescence of exciton polaritons in a ZnO film
40. Application of picosecond four‐wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN
41. Optical properties of InN with stoichoimetry violation and indium clustering
42. Performance of III‐nitride epitaxy in a low V‐to‐III gas‐flow ratio range under nitrogen ambient in a hot‐wall MOCVD system
43. Radiative recombination processes in Al 0.07 Ga 0.93 N/GaN multiple quantum well structures, role of hole localisation
44. Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
45. Optical investigation of AlGaN/GaN quantum wells and superlattices
46. Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
47. Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells
48. Polarized photoluminescence of exciton-polaritons in free-standing GaN
49. Exciton magnetic polarons in a type II ZnMnSe/ZnSSe superlattice
50. Temperature study of the photoluminescence of a single InAs/GaAs quantum dot
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.