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A quantitative angle-resolved XPS analysis was carried out of the carbonaceous films resulting from the derivatization under mild thermal activation of nearly flat, terraced, dihydrogen-terminated, 1 × 1 (100) Si with 1-octene or 1-octyne. The analysis of the C 1s signal gave evidence for the presence of carbon in carbide configuration (SiC bonds) at the substrate–film interface, in addition to the alkanic carbon and adventitious oxidized carbon (CO bonds) produced by the oxidizing impurities flawing the reaction. Assuming the surface as uniformly covered, the analysis showed that for both reactants the films were closely packed. Copyright © 2006 John Wiley & Sons, Ltd.

An experimental study of the derivatization of Si(100) surfaces with 1-octyne has been carried out via x-ray photoelectron spectroscopy at different take-off angles, and infrared absorption spectroscopy in attenuated total reflection mode and atomic force microscopy have been used to characterize the pristine surface. Our study has shown that it is possible to prepare nearly flat, terraced, homogeneously hydrogen-terminated Si(100) surfaces via exposure to H2 at high temperature (1100 °C) and that these surfaces may be functionalized with hydrocarbon moieties by simple immersion in the unsaturated hydrocarbon at ∼200 °C. Copyright © 2004 John Wiley & Sons, Ltd.

Heating (100) silicon at high temperature (say, higher than 850 °C) in H2, cooling to 670–700 °C in the same ambient, and quenching to room temperature in N2 results in environmentally robust, terraced 1 × 1 (100) SiH2. Evidence for this conclusion is based on angle-resolved x-ray photoelectron spectroscopy, atomic force microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, thermal programmed desorption, and reflection high-energy electron diffraction. Copyright © 2005 John Wiley & Sons, Ltd.

An experimental study of the Si 2p XPS spectrum at different take-off angles of atomically flat, hydrogen-terminated 1 × 1 Si(100) is reported. The observed spectrum can be described accurately by considering three additional contributions to the spectrum of elemental silicon. Each contribution is attributed to a chemical state of silicon on the basis of its chemical shift with respect to elemental silicon and the depth of the region where it was originated. Copyright © 2003 John Wiley & Sons, Ltd.

The early oxidation stages of hydrogen-terminated single-crystalline Si(100) exposed to a diluted N2/N2O atmosphere at 850° C for different durations have been studied by XPS, following the evolution of the Si 2p signal. Evidence is given that the usual analysis, in terms of five pairs of peaks attributed to silicon in oxidation states from 0 to +4, does not account for the observed Si 2p signal. The spectrum is accurately reproduced only by assuming the existence of silicon in bonding configurations different from those usually assumed to occur at the Si/SiO2 interface. Copyright © 2002 John Wiley & Sons, Ltd.

Silicon oxide and silicon nitride surfaces have been treated with 1-octadecene at ∼200°C. The resulting film topography has been inspected by atomic force microscopy (AFM), showing a densely packed organic coating with a corrugation of some tenths of a nanometre. High-mass-resolution time-of-flight secondary ion mass spectrometry (ToF-SIMS) spectra from such surfaces display octadecene- as well as substrate-related peaks. Furthermore, peaks diagnostic of the formation of SiOC or SiC linkages are observed in the case of silicon oxide, whereas the same peaks and those due to SiNC species have been observed in the case of silicon nitride. These results suggest that 1-octadecene molecules are chemisorbed on the substrate. Contact angle measurements and AFMforce spectroscopy measurements allow comparison upon the macroscopic and nanoscopic scale, respectively, of the surface free energy modification due to the formation of the organic coating.