1. Optical investigation of GaAs1−xNx/GaAs heterostructure properties
- Author
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F. Hassen, Yves Monteil, H. Dumont, Laurent Auvray, Faouzi Saidi, Hassen Maaref, Laboratoire de Micro-optoélectronique et Nanostructures [Monastir], Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM)-Université de Monastir - University of Monastir (UM), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS]Physics [physics] ,010302 applied physics ,Photoluminescence ,Condensed matter physics ,Chemistry ,Exciton ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Blueshift ,Phase (matter) ,0103 physical sciences ,Metalorganic vapour phase epitaxy ,0210 nano-technology ,ComputingMilieux_MISCELLANEOUS ,Quantum well - Abstract
We have investigated, by photoluminescence (PL), the optical properties of GaAs1−xNx/GaAs epilayers and GaAs1−xNx/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy (MOVPE) on (001)-oriented GaAs substrates. Different behaviors have been observed for the bulk epilayer and for the QW structures, respectively: (i) a blue shift of the PL bands in both kinds of structures when increasing the excitation density, (ii) an S-shaped PL peak energy versus temperature dependence has been observed for the GaAsN epilayer but a usual behavior is obtained for the QWs. Based in these experimental results, we have suggested that the carrier recombination mechanisms in the epilayer and in the quantum well structure are different. An enhanced exciton-localization-like mode for the epilayer is observed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Published
- 2004