31 results on '"Karakostas, Th."'
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2. Structure and interfacial properties of semipolars-plane (1-101) InN grown onr-plane sapphire
3. Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires
4. Microstructure of N‐face InN grown on Si (111) by plasma‐assisted MBE using a thin GaN–AlN buffer layer
5. Strain accommodation and interfacial structure of AlN interlayers in GaN
6. Core models of a‐edge threading dislocations in wurtzite III(Al,Ga,In)‐nitrides
7. Polar AlN/GaN interfaces: Structures and energetics
8. Energetics of oxygen adsorption and incorporation at InN polar surface: A first‐principles study
9. Atomic‐scale configuration of catalyst particles on GaN nanowires
10. Structural properties of ultrathin InGaN/GaN quantum wells
11. Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE
12. Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy
13. Micropore modification in InP
14. Interatomic potential calculations of III(Al, In)–N planar defects with a III‐species environment approach
15. Analysis of partial dislocations in wurtzite GaN using gradient elasticity
16. Mixed partial dislocation core structure in GaN by high resolution electron microscopy
17. Partial dislocations in wurtzite GaN
18. Interfacial steps, dislocations, and inversion domain boundaries in the GaN/AlN/Si (0001)/(111) epitaxial system
19. Disconnections and inversion domain formation in GaN/AlN heteroepitaxy on (111) silicon
20. Atomic simulations and HRTEM observations of a Σ 18 tilt grain boundary in GaN
21. Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE
22. The Microstructure of Ti/Al and TiN Ohmic Contacts to Gallium Nitride
23. Grain boundary orientation determination in transmission electron microscopy
24. Grain boundary analysis in TEM III. Determination of conditions for csl and application in copper
25. Grain boundary analysis in TEM. I. Practical determination of bicrystal orientations
26. Coherency strains and growth of artificially modulated CuNi thin films
27. Grain boundary analysis in TEM. II. A modified O-lattice for CSL and DSC lattice determination
28. The ordered state of In2Te3 and its relation to the transition state
29. Grain boundary analysis in TEM. V. A. Criterion for the identification of a CSL and a characterization of an approximate CSL
30. Annealing structures of grain boundaries in zirconium
31. An electron microscopic examination of monoclinic GaTe
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