1. Fast and direct identification of SARS‐CoV‐2 variants via 2D InSe field‐effect transistors
- Author
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Duo Xu, Junji Li, Yunhai Xiong, Han Li, Jialin Yang, Wenqiang Liu, Lianfu Jiang, Kairui Qu, Tong Zhao, Xinyu Shi, Shengli Zhang, Dan Shan, Xiang Chen, and Haibo Zeng
- Subjects
2D InSe ,field‐effect transistors ,SARS‐CoV‐2 ,single‐nucleotide variations ,trap states ,Materials of engineering and construction. Mechanics of materials ,TA401-492 ,Information technology ,T58.5-58.64 - Abstract
Abstract As the COVID‐19 pandemic evolves and new variants emerge, the development of more efficient identification approaches of variants is urgent to prevent continuous outbreaks of SARS‐CoV‐2. Field‐effect transistors (FETs) with two‐dimensional (2D) materials are viable platforms for the detection of virus nucleic acids (NAs) but cannot yet provide accurate information on NA variations. Herein, 2D Indium selenide (InSe) FETs were used to identify SARS‐CoV‐2 variants. The device's mobility and stability were ensured by atomic layer deposition (ALD) of Al2O3. The resulting FETs exhibited sub‐fM detection limits ranging from 10–14 M to 10–8 M. The recognition of single‐nucleotide variations was achieved within 15 min to enable the fast and direct identification of two core mutations (L452R, R203M) in Delta genomes (p
- Published
- 2023
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