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New thin-film dielectrics and nanolaminates have been synthesized via aqueous-solution deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor solution have been achieved without organic additives. X-ray reflectivity, imaging, and metal-insulator-metal capacitor performance reveal that smooth, atomically dense films are readily produced by spin coating and modest thermal treatment (T

High-quality, smooth and dense HfO2 thin films are deposited by spin coating using an aqueous H2O2/HNO3 solution of the precipitate obtained from an aq.

Highperformance TFTs with solutiondeposited amorphous oxide semiconductor and gate dielectric layers are fabricated at ≤ 350 °C. The initial performance and stability of these TFTs are investigated with respect to device structure and source/drain materials. Topcontact TFTs exhibit better electrical performance and reliability than bottomcontact devices. Representative topcontact device mobility is 1.90 cm2/Vs with an ontooff drain current ratio of 7.0 × 108.