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The rapid progress of noisy intermediate-scale quantum (NISQ) computing underscores the need to test and evaluate new devices and applications. Quantum chemistry is a key application area for these devices, and therefore serves as an important benchmark for current and future quantum computer performance. Previous benchmarks in this field have focused on variational methods for computing ground and excited states of various molecules, including a benchmarking suite focused on performance of computing ground states for alkali-hydrides under an array of error mitigation methods. Here, we outline state of the art methods to reach chemical accuracy in hybrid quantum-classical electronic structure calculations of alkali hydride molecules on NISQ devices from IBM. We demonstrate how to extend the reach of variational eigensolvers with new symmetry preserving Ans\"atze. Next, we outline how to use quantum imaginary time evolution and Lanczos as a complementary method to variational techniques, highlighting the advantages of each approach. Finally, we demonstrate a new error mitigation method which uses systematic error cancellation via hidden inverse gate constructions, improving the performance of typical variational algorithms. These results show that electronic structure calculations have advanced rapidly, to routine chemical accuracy for simple molecules, from their inception on quantum computers a few short years ago, and they point to further rapid progress to larger molecules as the power of NISQ devices grows.

Ionicity plays an important role in determining material properties, as well as optoelectronic performance of organometallic trihalide perovskites (OTPs). Ion migration in OTP films has recently been under intensive investigation by various scanning probe microscopy (SPM) techniques. However, controversial findings regarding the role of grain boundaries (GBs) associated with ion migration are often encountered, likely as a result of feedback errors and topographic effects common in to SPM. In this work, electron microscopy and spectroscopy (scanning transmission electron microscopy/electron energy loss spectroscopy) are combined with a novel, open-loop, band-excitation, (contact) Kelvin probe force microscopy (BE-KPFM and BE-cKPFM), in conjunction with ab initio molecular dynamics simulations to examine the ion behavior in the GBs of CH3NH3PbI3 perovskite films. This combination of diverse techniques provides a deeper understanding of the differences between ion migration within GBs and interior grains in OTP films. This work demonstrates that ion migration can be significantly enhanced by introducing additional mobile Cl− ions into GBs. The enhancement of ion migration may serve as the first step toward the development of high-performance electrically and optically tunable memristors and synaptic devices.