127 results on '"Hwang, Cheol Seong"'
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2. Cross‐Wired Memristive Crossbar Array for Effective Graph Data Analysis
3. Parallel Density‐Based Spatial Clustering with Dual‐Functional Memristive Crossbar Array
4. Spatiotemporal Data Processing with Memristor Crossbar Array‐Based Graph Reservoir
5. Review of Semiconductor Flash Memory Devices for Material and Process Issues (Adv. Mater. 43/2023)
6. Exploring the Physical Origin of the Negative Capacitance Effect in a Metal–Ferroelectric–Metal–Dielectric Structure
7. Top Electrode Engineering for High‐Performance Ferroelectric Hf 0.5 Zr 0.5 O 2 Capacitors
8. Evolution of the Ferroelectric Properties of AlScN Film by Electrical Cycling with an Inhomogeneous Field Distribution
9. Graph Analysis with Multifunctional Self‐Rectifying Memristive Crossbar Array
10. Efficient Method for Error Detection and Correction in In‐Memory Computing Based on Reliable Ex‐Logic Gates
11. Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading
12. Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al 2 O 3 ‐Hf 0.5 Zr 0.5 O 2 ‐Al 2 O 3 Triple‐Layer Structure
13. Stacked One‐Selector‐One‐Resistive Memory Crossbar Array With High Nonlinearity and On‐Current Density for the Neuromorphic Applications (Adv. Electron. Mater. 12/2022)
14. Atomic Layer Deposition of Sb 2 Te 3 /GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory
15. Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO 2 Ferroelectric Film (Adv. Electron. Mater. 11/2022)
16. Stacked One‐Selector‐One‐Resistive Memory Crossbar Array With High Nonlinearity and On‐Current Density for the Neuromorphic Applications
17. Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm
18. Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory (Adv. Electron. Mater. 8/2022)
19. Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance
20. Demonstration of Neuromodulation‐inspired Stashing System for Energy‐efficient Learning of Spiking Neural Network using a Self‐Rectifying Memristor Array (Adv. Funct. Mater. 29/2022)
21. The Contrasting Impacts of the Al 2 O 3 and Y 2 O 3 Insertion Layers on the Crystallization of ZrO 2 Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022)
22. Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO 2 Ferroelectric Film
23. Review of Semiconductor Flash Memory Devices for Material and Process Issues
24. Reliable Domain‐Specific Exclusive Logic Gates Using Reconfigurable Sequential Logic Based on Antiparallel Bipolar Memristors
25. The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors
26. Demonstration of Neuromodulation‐inspired Stashing System for Energy‐efficient Learning of Spiking Neural Network using a Self‐Rectifying Memristor Array
27. Reliable Domain‐Specific Exclusive Logic Gates Using Reconfigurable Sequential Logic Based on Antiparallel Bipolar Memristors
28. Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance
29. Negative Capacitance from the Inhomogenous Stray Field in a Ferroelectric–Dielectric Structure
30. In‐Depth Analysis of One Selector–One Resistor Crossbar Array for Its Writing and Reading Operations for Hardware Neural Network with Finite Wire Resistance
31. In‐Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application
32. A High‐Speed True Random Number Generator Based on a CuxTe1− xDiffusive Memristor
33. A High‐Speed True Random Number Generator Based on a CuxTe1− xDiffusive Memristor
34. Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory
35. Enhanced Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films Using a HfO 0.61 N 0.72 Interfacial Layer
36. Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice
37. Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)mSuperlattice
38. Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers
39. Review of ferroelectric field‐effect transistors for three‐dimensional storage applications
40. Trap Reduction through O 3 Post‐Deposition Treatment of Y 2 O 3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates
41. Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor
42. Field‐Induced Ferroelectric Hf 1‐xZrxO 2 Thin Films for High‐ k Dynamic Random Access Memory
43. Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics
44. Area‐Type Electronic Bipolar Resistive Switching of Pt/Al 2 O 3 /Si 3 N 3.0 /Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics
45. 2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al 2 O 3 /SrTiO 3 Interface (Adv. Electron. Mater. 6/2020)
46. Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface
47. Hardware‐Based Security: A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption (Adv. Electron. Mater. 5/2020)
48. A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption
49. Kernel Application of the Stacked Crossbar Array Composed of Self‐Rectifying Resistive Switching Memory for Convolutional Neural Networks
50. A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors
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