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The design of catalysts that are both highly active and stable is always challenging. Herein, we report that the incorporation of single metal active sites attached to the nitrogen atoms in the basal plane of graphene leads to composite materials with superior activity and stability when used as counter electrodes in dye-sensitized solar cells (DSSCs). A series of composite materials based on different metals (Mn, Fe, Co, Ni, and Cu) were synthesized and characterized. Electrochemical measurements revealed that CoN4 /GN is a highly active and stable counter electrode for the interconversion of the redox couple I(-) /I3 (-) . DFT calculations revealed that the superior properties of CoN4 /GN are due to the appropriate adsorption energy of iodine on the confined Co sites, leading to a good balance between adsorption and desorption processes. Its superior electrochemical performance was further confirmed by fabricating DSSCs with CoN4 /GN electrodes, which displayed a better power conversion efficiency than the Pt counterpart.

Interfaces between materials with different electronic ground states have become powerful platforms for creating and controlling novel quantum states of matter, in which inversion symmetry breaking and other effects at the interface may introduce additional electronic states. Among the emergent phenomena, superconductivity is of particular interest. Here, by depositing metal films on a newly identified topological semimetal tungsten carbide (WC) single crystal, interfacial superconductivity is obtained, evidenced from soft point-contact spectroscopy. This very robust phenomenon is demonstrated for a wide range of metal/WC interfaces, involving both nonmagnetic and ferromagnetic films, and the superconducting transition temperatures are surprisingly insensitive to the magnetism of thin films. This method offers an opportunity to explore the long-sought topological superconductivity and has potential applications in topological-state-based spin devices.

863 Project [2009AA033101]; "973" Projects [2010CB833102]; NSFC [50972164, 51222210]; CAS project [KJCX2-YW-W26]; 100 Talent Project of the Chinese Academy of Sciences, Program for New Century Excellent Talents in University [NCET-09-0628]; SRF for ROCS, SEM

Intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at reverse biases. In this paper, the authors report for the first time another type of IR-RS that is related to the built-in homojunction. The IR-RS study is usually limited to macroscopic samples with micrometer-order pad-type electrodes, while this work is on NiO nanodots fabricated with ultrathin anodic-aluminum-oxide templates and acting as nanoscaled analogs of real devices. The NiO nanodots show high storage density and high uniformity, and the IR-RS behaviors are of good device performances in terms of retention, endurance, switching ratio, and rectification ratio. The feasibility of the IR-RS for selection device-free memory application is demonstrated by calculating the maximum crossbar array size under the worst-case scenario to be 3 Mbit.