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Prurigo nodularis (PN) is a highly pruritic, chronic dermatosis and difficult to treat. PN lesions are characterized by existence of many hyperkeratotic, erosive papules and nodules. However, the pathogenesis of PN still remains unelucidated.To clarify the keratin role in the epidermis hyperproliferation, the keratin expression pattern in the PN lesional skin.In this study, we enrolled 24 patients with PN and 9 healthy control volunteers. K1/K10, K5/K14, K6/K16/K17 expression pattern were investigated by using immunohistochemical staining.The lesional skin consists of the thickened spinous layers, in which active cell division was found. K5/K14 were upregulated in PN lesional epidermis, the staining signal localized in the basal layer and lower suprabasal layers. Hyperproliferation-associated K6 was found in all layers of epidermal lesional skin, especially in the spinous layers. In contrast, K16 was only detected in the basal and lower suprabasal layers, K17 was observed in the basal and spinous layers. Terminal differential keratins K1/K10 were upregulated, detected in the pan-epidermis, but spared in the basal and low suprabasal layers.The keratinocytes enter an alternative differentiation pathway, which are responsible for the activated keratinocyte phenotype, abnormal keratins expression potentially contributes to the keratinocytes proliferation, subsequently lead to increased lesional skin epidermis thickness, hyperkeratiosis and alteration of skin barrier properties.

We report the fabrication and characterization of highly responsive ZnMgO-based ultraviolet (UV) photodetectors in the metal–semiconductor–metal (MSM) configuration for solar-blind/visible-blind optoelectronic application. MSM devices were fabricated from wurtzite Zn1–xMgx O/ZnO (x ∼ 0.44) thin-film heterostructures grown on sapphire (α-Al2O3) substrates and w-Zn1–xMgx O (x ∼ 0.08), grown on nearly lattice-matched lithium gallate (LiGaO2) substrates, both by radio-frequency plasma-assisted molecular beam epitaxy (PAMBE). Thin film properties were studied by AFM, XRD, and optical transmission spectra, while MSM device performance was analyzed by spectral photoresponse and current–voltage techniques. Under biased conditions, α-Al2O3 grown devices exhibit peak responsivity of ∼7.6 A/W at 280 nm while LiGaO2 grown samples demonstrate peak performance of ∼119.3 A/W, albeit in the UV-A regime (∼324 nm). High photoconductive gains (76, 525) and spectral rejection ratios (∼103, ∼104) were obtained for devices grown on α-Al2O3 and LiGaO2, respectively. Exemplary device performance was ascribed to high material quality and in the case of lattice-matched LiGaO2 films, decreased photocarrier trapping probability, presumably due to low-density of dislocation defects. To the best of our knowledge, these results represent the highest performing ZnO-based photodetectors on LiGaO2 yet fabricated, and demonstrate both the feasibility and substantial enhancement of photodetector device performance via growth on lattice-matched substrates. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

We report on the electrical and optical properties of InGaN based light emitting diodes (LEDs) utilizing Ga doped ZnO (GZO) grown by MBE as a highly transparent contact p -electrode (GZO-LEDs). For comparison, the LEDs with semi-transparent thin Ni/Au (5nm/5nm) current spreading layers were also fabricated on the same wafer (Ni/Au-LEDs). Pulsed electroluminescence measurements revealed that the relative external quantum efficiency (EQE) of the GZO-LED is 1.7-2 times higher than that of Ni/Au-LED at high current densities. Moreover, GZO-LEDs can withstand much higher current densities (4700 A/cm2) than the Ni/Au LEDs (3500 A/cm2) under pulsed mode. Unpackaged GZO-LEDs with 200 μm diameter showed negligible light output degradation for up to 30 mins under CW current of 100 mA (corresponding to a 318 Acm-2 current density), while the light output for Ni/Au-LEDs was reduced by 85% after only 5 mins of operation due to the severe current crowding effect (or current filamentation). (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

We report on the electrical and optical properties of InGaN based light emitting diodes (LEDs) utilizing Ga doped ZnO (GZO) grown by molecular beam epitaxy (MBE) as a highly transparent contact p-electrode (GZO-LEDs). For comparison, the LEDs with semi-transparent thin Ni/Au (5/5 nm) current spreading layers were also fabricated on the same wafer (Ni/Au-LEDs). Unpackaged GZO-LEDs with 200 μm diameter showed negligible light output degradation for up to 30 min under CW current of 100 mA (corresponding to a 318 A/cm 2 current density), while the light output for Ni/Au-LEDs was reduced by 85% after only 5 min of operation due to the severe current crowding effect (or current filamentation). Pulsed electroluminescence (EL) measurements revealed that the GZO-LEDs exhibit 50% higher EL intensity for the same current levels.

The aim of this study was to investigate the changes in cerebral blood flow velocity (CBFV) and its relation to apolipoprotein E (apoE) epsilon4 allele in mild cognitive impairment (MCI). Thirty MCI and 30 controls were assessed using Mini-Mental State Examination (MMSE) and Cambridge Cognitive Examination-Chinese version (CAMCOG-C), and then insonated in the anterior (ACA), middle (MCA) and basilar (BA) cerebral arteries using transcranial Doppler ultrasonography. Compared with controls, MCI showed significant decreases in the mean (V(m)), systolic (V(s)) and diastolic (V(d)) CBFV, bilaterally in MCA and ACA (P < 0.05-0.001), but not in BA. Compared with 17 apoE epsilon4 allele non-carriers, 13 carriers in MCI showed significant CBFV decreases, bilaterally in MCA (P < 0.05-0.001). Our findings, the decreased CBFV in apoE epsilon4 allele carriers with MCI, suggest that a large sample and longitudinal study in CBFV and cognitive changes may have the implications on early diagnosis of Alzheimer's disease.

The depth profile of thermal donors (TDs) produced by annealing neutron transmutation-doped Czochralski silicon (NTDCZSi) at high temperatures above 1000 °C first and then at 450 °C has been studied by means of the thermal conversion spreading resistance (TCSR). The concentration of the TDs increases with the distance from the surface of the sample, and its depth profile can be described by the error function when the annealing temperature is low or the annealing time is short. A peak is formed in the depth profile under the annealing condition of 1100 °C for 4 h. Combining with an infrared absorption study, it is found that the curves of the diffusivity coincide with the loss of interstitial oxygen. These results indicate that the distribution of the TDs depends on both the out-diffusion and the precipitation of oxygen. Neutron irradiation accelerates the out-diffusion of the oxygen in the surface region of the silicon and the oxygen precipitation in the bulk.

We demonstrate a critical effect of a metal-to-oxygen ratio on the electrical, optical, and structural properties of ZnO films heavily doped with Ga (carrier concentration in the range of 1020–1021 cm–3) grown by plasma-assisted molecular beam epitaxy. The as-grown layers prepared under the metal-rich conditions exhibited resistivities below 3 × 10–4 Ω cm and an optical transparency exceeding 90% in the visible spectral range as well as a large blue shift of the transmission/absorption edge attributed to the Burstein–Moss shift of the Fermi level deep into the conduction band, indicating high donor concentration. In contrast, the films grown under the oxygen-rich conditions required thermal activation and showed inferior properties. Furthermore, electrical measurements point to the nonuniform depth distribution of free carriers. An oxygen-pressure-dependent surface disordering is suggested to be responsible for the drastic effect of the metal-to-oxygen ratio on the film properties. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Summary Flexuous thread-like virus particles c. 650–700 nm in length were isolated from brusca (Senna pallida) plants showing stunting, mosaic, vein yellowing and leaf malformation. The virus was mechanically transmitted to healthy Senna pallida, Cassia obovata and Cassia emarginata L. plant species. Virus particles sedimented in sucrose density gradients as one component, with a bouyant density of 1.2 g cm−3 in caesium chloride equilibrium gradients. Virions contained a molecule of ssRNA with an apparent size of 6.4 kb. The dsRNA pattern showed one main band of about 12 kb, and two subgenomic dsRNA of c. 10 and c. 5.4 kb. Analyses of purified virus preparations by sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) resolved two coat protein subunits, with mol. wt of c. 28 000 and 26 000 daltons. In Western blotting the virus coat proteins reacted with an homologous polyclonal antiserum and with an antiserum to Lettuce infectious yellow virus. Electron microscopic observations of cells from infected plants showed the accumulation of cytoplasmic vesiculate inclusion bodies and crystalline aggregates of virus particles within phloem tissue. Some of the physicochemical and ultrastructural properties of this virus resemble those of a Closterovirus; however, differences show it to be sufficiently distinct from any previously reported viruses. We proposed the name of Senna chlorotic stunt (SeCSV) for this virus.

New copolymers were prepared from methacrylate and methacrylamide derivatives of cholic acid and methacrylic acid by free radical polymerization in solution. The copolymers were characterized by solid-state 13 C NMR spectroscopy and differential scanning calorimetry. The copolymers all have a single glass transition temperature located between the glass transition temperatures of the two corresponding homopolymers. The copolymers were found to be random, and the chemical composition in the final products was close to the original monomer composition in the feed prior to polymerization. Water absorption measurements showed that the water absorption capacity of the copolymers increases from about 10% to about 35% with increasing molar ratio of methacrylic acid in the copolymers.

Etudes de la reduction electrochimique d'oxygene, en presence d'une electrode tournante a disque et anneau de graphite, recouverte de complexes de Co(II) avec l'anthrylene-1,9-5,5' bis-porphyrine-(octaethyl octamethyl) ou la biphenylenylene-1,8-5,5' bis-porphyrine(octaethyl octamethyl)

Unimolecular rate constants, K sub et, are reported for the one-electron electroreduction of pentaamminecobalt (III) anchored to mercury, gold, or copper electrodes via various thiophenecarboxylate ligands where the thiophene sulfur acts as the surface binding group and the carboxylate is coordinated to the cobalt reactants. At mercury, the rate parameters were found to be sensitive to the bridging ligand structure, substantially (ca. 10-20 fold) smaller values of K sub et being found for ligands containing one or more methylene groups between the thiophene sulfur and carboxylate oxygen than those featuring uninterrupted bond conjugation between the metal surface donor and Co(III) acceptor sites. Various contributions to these reactivity differences are asse-sed on the basis of the measured variations in the stability constants of the adsorbed precursor state, the rate constants for the homogeneous reduction of these complexes by hexammineruthenium (II), the unimolecular frequency factors obtained from the electrochemical activation parameters, and by comparison with ele-trochemical outer-sphere rate data. Taken together, these results provide strong evidence that the smaller values of K sub et values of the electronic transmission coefficient than are achieved with the conjugated ligands. Comparison is made with analogous results for intramolecular electron transfer via extended organic ligands in homogeneous solution. (Author)