1. Thermal performance of nanoscale InGaP/GaAs collector-up heterojunction bipolar transistors investigated by the advanced optimization technique
- Author
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H. C. Tseng and Jeng-Ming Wu
- Subjects
Power-added efficiency ,Materials science ,business.industry ,Heterostructure-emitter bipolar transistor ,Heterojunction bipolar transistor ,Bipolar junction transistor ,Transistor ,Design tool ,Heterojunction ,Hardware_PERFORMANCEANDRELIABILITY ,Computer Science Applications ,law.invention ,Hardware_GENERAL ,law ,Modeling and Simulation ,Thermal ,Hardware_INTEGRATEDCIRCUITS ,Optoelectronics ,Electrical and Electronic Engineering ,business - Abstract
SUMMARY The effects of thermal-dissipation structure on the thermal performance of nanoscale InGaP/GaAs collector-up heterojunction bipolar transistors were investigated by using the advanced hybrid optimization technique, a combination of the three-dimensional finite-element method for temperature-distribution analysis and the technology computer-aided design tool for power-performance evaluation. Through adequately locating the thermal-dissipation structure at the rear side of the transistor and via effective thickness-thinning procedures, which reduce foundry cost, the thermal coupling between collector fingers has been greatly ameliorated and a power-added efficiency of 45% is achieved. Copyright © 2013 John Wiley & Sons, Ltd.
- Published
- 2013
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