1. Fabrication of ridge‐shaped AlGaInP/GaInP quantum well structure for observation of evanescent wave coupling effect
- Author
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Xue-Lun Wang, Guo-Dong Hao, and Jong Uk Seo
- Subjects
Diffraction ,Fabrication ,Photoluminescence ,Materials science ,business.industry ,Heterojunction ,Semiconductor device ,Condensed Matter Physics ,law.invention ,Optics ,law ,Optoelectronics ,business ,Quantum well ,Light-emitting diode ,Diode - Abstract
A ridge-shaped AlGaInP/GaInP quantum well (QW) structure with a ridge top width in the sub-wavelength region (500–600 nm) is successfully fabricated by selective area metal organic vapor phase epitaxial growth on patterned GaAs substrates, as the first step towards the realization of high-efficiency light-emitting diodes (LEDs) utilizing the evanescent wave coupling effect. It is confirmed by an X-ray diffraction study that AlGaInP layers grown on all the different facets of the ridge structure satisfy the lattice matching requirements for high-efficiency LED applications. A considerable enhancement of the light-extraction efficiency in the fabricated ridge-shaped QW structure is demonstrated by means of a photoluminescence analysis. The realization of the evanescent wave coupling effect is suggested by theoretical simulation. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Published
- 2011
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