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5. Microstructure of Mg doped GaNAs alloys

8. Molecular beam epitaxy of GaN1–xBix alloys with high bismuth content

11. Non‐equilibrium GaNAs alloys with band gap ranging from 0.8‐3.4 eV

21. Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures

24. Characterization of nitride thin films by electron backscatter diffraction

25. RHEED Studies of Group III-Nitrides Grown by MBE

29. Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

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