1. Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO 3 Thin Films
- Author
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Xiaoxing Cheng, Zi Long Bai, James F. Scott, An Quan Jiang, Cheol Seong Hwang, Dong Fang Chen, David Wei Zhang, Long Qing Chen, University of St Andrews. School of Chemistry, University of St Andrews. School of Physics and Astronomy, and University of St Andrews. Condensed Matter Physics
- Subjects
Materials science ,TK ,NDAS ,Ferroelectric domain-wall memory ,Wall current ,02 engineering and technology ,Epitaxy ,01 natural sciences ,TK Electrical engineering. Electronics Nuclear engineering ,Domain (software engineering) ,Biomaterials ,0103 physical sciences ,Electrochemistry ,Thin film ,010306 general physics ,Hierarchical domains ,QC ,Structure (mathematical logic) ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Chinese academy of sciences ,Engineering physics ,Multiple rotations ,Electronic, Optical and Magnetic Materials ,QC Physics ,0210 nano-technology ,Domain wall - Abstract
Funding: J.F.S. acknowledges the financial support of the Strategic Priority Research Program of the Chinese Academy of Sciences (grant number XDB07030200). Erasable electrical conductive domain walls in an insulating ferroelectric matrix provide novel functionalities for applications in logic and memory devices. The crux of such success requires sufficiently high wall currents to drive high‐speed and high‐power nanodevices. This work provides an appealing strategy to increase the current by two orders of magnitude through the careful selection of current flowing paths along the charged walls. The dense walls come into form through the hierarchical evolution of the 71°, 109°, and 180° domains of epitaxial BiFeO3 films in a planar‐geometry ferroelectric resistance‐switching memory cell. The engineered films grown on SrTiO3 and GdScO3 substrates allow the observation of detailed local configurations and the evolution of the different domain types using vector piezo‐force microscopy. The higher local electrical conductivity near the charged domain walls is identified by conductive atomic‐force microscopy. It is shown that 180° domain reversal proceeds by three‐step 71° rotations of the pristine domains. Surprisingly, a maximum current of ≈300 nA is observed for current paths along charge‐uncompensated head‐to‐head hierarchical domain walls connecting the two electrodes on the film surface. Furthermore, the achievable current level can be conveniently controlled by varying the relative directions of the initial polarization and the applied field. Postprint
- Published
- 2018
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