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6 results on '"Christopher Muratore"'

1. Ultrathin Broadband Metasurface Superabsorbers from a van der Waals Semimetal

Author

Adam D. Alfieri, Michael J. Motala, Michael Snure, Jason Lynch, Pawan Kumar, Huiqin Zhang, Susanna Post, Timothy Bowen, Christopher Muratore, Joshua A. Robinson, Joshua R. Hendrickson, Nicholas R. Glavin, and Deep Jariwala

Subjects
Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
Published
2022

2. Laser‐Fabricated 2D Molybdenum Disulfide Electronic Sensor Arrays for Rapid, Low‐Cost, Ultrasensitive Detection of Influenza A and SARS‐Cov‐2

Author

Christopher Muratore, Melani K. Muratore, Drake R. Austin, Paige Miesle, Anna K. Benton, Lucas K. Beagle, Michael J. Motala, David C. Moore, Joseph M. Slocik, Michael C. Brothers, Steve S. Kim, Kristen Krupa, Tyson A. Back, John T. Grant, and Nicholas R. Glavin

Subjects
Mechanics of Materials, Mechanical Engineering
Abstract

Multiplex electronic antigen sensors for detection of SARS-Cov-2 spike glycoproteins and hemagglutinin from influenza A are fabricated using scalable processes for straightforward transition to economical mass-production. The sensors utilize the sensitivity and surface chemistry of a 2D MoS

Published
2022

3. Ultrasensitive Molecular Sensors Based on Real‐Time Impedance Spectroscopy in Solution‐Processed 2D Materials (Adv. Funct. Mater. 12/2022)

Author

David C. Moore, Ali Jawaid, Robert Busch, Michael Brothers, Paige Miesle, Adam Miesle, Rahul Rao, Jonghoon Lee, Lucas K. Beagle, Michael Motala, Shay Goff Wallace, Julia R. Downing, Ajit Roy, Christopher Muratore, Mark C. Hersam, Richard Vaia, Steve Kim, and Nicholas R. Glavin

Subjects
Biomaterials, Electrochemistry, Condensed Matter Physics, Electronic, Optical and Magnetic Materials
Published
2022

4. Ultrasensitive Molecular Sensors Based on Real‐Time Impedance Spectroscopy in Solution‐Processed 2D Materials

Author

Christopher Muratore, Mark C. Hersam, Jonghoon Lee, Robert Busch, Julia R. Downing, Ali Jawaid, Rahul Rao, Richard A. Vaia, Steve S. Kim, Ajit K. Roy, Michael J. Motala, Paige Miesle, Nicholas R. Glavin, Shay G. Wallace, Lucas K. Beagle, Adam Miesle, and David Moore

Subjects
Biomaterials, chemistry.chemical_compound, Materials science, chemistry, business.industry, Electrochemistry, Optoelectronics, Condensed Matter Physics, business, Molybdenum disulfide, Electronic, Optical and Magnetic Materials, Dielectric spectroscopy, Solution processed
Published
2021

5. Amorphous Boron Nitride: A Universal, Ultrathin Dielectric For 2D Nanoelectronics

Author

Austin T. Blake, Christopher Muratore, Drew M. Hilgefort, Timothy S. Fisher, Phillip T. Hagerty, Nicholas R. Glavin, Michael E. McConney, Christopher A. Grabowski, Al M. Hilton, Michael F. Durstock, Michael L. Jespersen, Andrey A. Voevodin, and Jianjun Hu

Subjects
Materials science, Passivation, Graphene, Transistor, Nanotechnology, 02 engineering and technology, Dielectric, Nitride, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Pulsed laser deposition, law.invention, Biomaterials, chemistry.chemical_compound, Nanoelectronics, chemistry, law, Boron nitride, Electrochemistry, 0210 nano-technology
Abstract

Next-generation nanoelectronics based on 2D materials ideally will require reliable, flexible, transparent, and versatile dielectrics for transistor gate barriers, environmental passivation layers, capacitor spacers, and other device elements. Ultrathin amorphous boron nitride of thicknesses from 2 to 17 nm, described in this work, may offer these attributes, as the material is demonstrated to be universal in structure and stoichiometric chemistry on numerous substrates including flexible polydimethylsiloxane, amorphous silicon dioxide, crystalline Al2O3, other 2D materials including graphene, 2D MoS2, and conducting metals and metal foils. The versatile, large area pulsed laser deposition growth technique is performed at temperatures less than 200 °C and without modifying processing conditions, allowing for seamless integration into 2D device architectures. A device-scale dielectric constant of 5.9 ± 0.65 at 1 kHz, breakdown voltage of 9.8 ± 1.0 MV cm−1, and bandgap of 4.5 eV were measured for various thicknesses of the ultrathin a-BN material, representing values higher than previously reported chemical vapor deposited h-BN and nearing single crystal h-BN.

Published
2016

6. Nanoelectronics: Amorphous Boron Nitride: A Universal, Ultrathin Dielectric For 2D Nanoelectronics (Adv. Funct. Mater. 16/2016)

Author

Michael E. McConney, Christopher Muratore, Austin T. Blake, Christopher A. Grabowski, Drew M. Hilgefort, Nicholas R. Glavin, Al M. Hilton, Michael F. Durstock, Phillip T. Hagerty, Timothy S. Fisher, Andrey A. Voevodin, Jianjun Hu, and Michael L. Jespersen

Subjects
010302 applied physics, Materials science, Nanotechnology, 02 engineering and technology, Dielectric, Nitride, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Biomaterials, chemistry.chemical_compound, Nanoelectronics, chemistry, Boron nitride, 0103 physical sciences, Amorphous boron, Electrochemistry, 0210 nano-technology
Published
2016

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