1. Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density
- Author
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Shin Mou, William C. Mitchel, Grace D. Metcalfe, H. E. Smith, Said Elhamri, Gail J. Brown, Michael Wraback, Elizabeth H. Steenbergen, and Blair C. Connelly
- Subjects
010302 applied physics ,Materials science ,Photoluminescence ,Condensed matter physics ,Dopant ,Infrared ,business.industry ,Superlattice ,Doping ,technology, industry, and agriculture ,02 engineering and technology ,Carrier lifetime ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Residual carrier ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Order of magnitude - Abstract
We investigate the minority carrier lifetime of Be-doped InAs/InAsSb type-II superlattices as a function of doping density and temperature using time-resolved photoluminescence (TRPL) to determine if switching the superlattice type from the typical n-type residual carrier concentration to p-type may improve device performance by improving the lifetime–mobility product. The introduction of the Be dopant to the superlattice reduces the carrier lifetime, first by a factor of ∼3 for doping densities near or below the n-type residual carrier concentration, then by an order of magnitude for samples doped well above the residual carrier concentration. Further, the higher-doped p-type samples demonstrate two distinct TRPL decay regimes and two peaks in the PL spectra, suggesting the formation of an additional acceptor-related recombination pathway leading to the observed shorter carrier lifetime.
- Published
- 2015
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