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Cu(In,Ga)Se-2 (CIGSe) solar cells are among the most efficient thin-film solar cells on lab scale. However, this thin-film technology has relatively large upscaling losses for commercial technology. To tackle this, paradigm shifts are proposed that allow for simpler, cost-effective, and efficient CIGSe solar cells. Front passivation using dielectric layers is one of the options being investigated as this is widely used in Si technology. Research on front passivation for CIGSe is in an early stage and no improvements are made yet. A close comparison with silicon technology is made to understand why it seems to be more difficult for CIGSe solar cells. In general, chemical passivation is less effective, resulting in higher interface defect densities than seen for Si. Also, field-effect passivation requires positive charges, which have not been implemented yet on the CIGSe front surface. Finally, for Si passivation, often a high-temperature annealing step is applied, which is not possible for CIGSe. It is proposed to apply a dielectric tunneling layer with positive fixed charges in combination with an electron transport layer to move forward. A list of potential dielectric layers that could be suitable for CIGSe is provided. Dr. J.D.W., Dr. G.B., and Professor B.V. received funding from the European Union’s H2020 research and innovation programme under grant agreement no. 715027 for this work. G.B acknowledges FWO postdoctoral fellowship 1219423N and R.S FWO Ph.D. fellowship fundamental research 1178022N.

Many economic and environmental studies on novel perovskite solar cells (PSCs), published ex post the development stage to investigate the market competitiveness, have focused on laboratory-scale PSC architectures that are not amenable for upscaling. In this paper, we evaluate the market potential and environmental sustainability of a scalable carbon-electrode-based PSC by benchmarking it to the market dominating c-Si photovoltaics and CIGS thin film photovoltaics. The analysis covers the PSCs full lifecycle, at the module and system levels (residential and utility scale), and is based on realistic annual energy output data derived from energy yield calculations. We find that this PSC can produce electricity at low cost (3–6 €cents/kWh), with lowest energy payback (0.6–0.8years) and greenhouse gas emissions (15–25g CO2eq./kWh) compared with grid-connected PV market alternatives, assuming 25 years of lifetime, expected PV system cost reductions, and PSC module recycling and refurbishment.

In ultrathin Cu(In,Ga)Se-2(CIGS) film solar cells, the CdS/CIGS interface may become one of the limiting factors for efficiency. The first step toward reducing the impact of this problem could be a surface treatment process to improve the quality of the front interface. The purpose of this study is to have a better understanding of the effect of wet chemical surface treatment, using ammonium sulfide ((NH4)(2)S), on CIGS thin film layers with different Cu/(Ga + In) (CGI) ratios. Herein, photoluminescence (PL) and time-resolved PL (TRPL) studies are conducted on bare CIGS, ammonium sulfide-treated CIGS thin films, and samples with CdS. In bare CIGS, CGI ratio-dependent changes in PL are observed on both a low-energy (defect related transition) and a high-energy peak (band-to-band transition). After the surface treatment, the PL maximum increases by factors ranging from 4 to 11 depending on the CGI ratio, accompanied by a slower decay. Trends with similar improvement as in the PL study are observed in the performance of the solar cells. It is shown that the impact of the surface treatment is beneficial independently of the CGI ratio of the absorber layers. In all cases, the treatment is shown to improve the efficiency. This work received funding from the European Union's H2020 research and innovation program under grant agreement No. 715027. Buldu, DG (corresponding author), Hasselt Univ Partner Solliance, Inst Mat Res IMO, Agoralaan Gebouw H, B-3590 Diepenbeek, Belgium ; Imec Div IMOMEC Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium ; EnergyVille, Thorpk,Poort Genk 8310 & 8320, B-3600 Genk, Belgium. Dilara.Gokcen.Buldu@imec.be

An optimized test structure to study rear surface passivation in Cu(In,Ga)Se-2 (CIGS) solar cells by means of photoluminescence (PL) is developed and tested. The structure - illustrated in the abst ...

The benefits of gallium (Ga) grading on Cu(In,Ga)Se2 (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive-level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free-carrier densities in the CIGS absorber, and their impact on the cell’s open-circuit voltage Voc. The parameter most constraining the cell’s Voc is found to be the deep-defect density close to the space charge region (SCR). In ungraded devices, high deep-defect concentrations (4.2 × 1016 cm–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell’s Voc. In graded devices, the deep-defect densities near the SCR decreased by one order of magnitude (2.5 × 1015 cm–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 1014 cm–3) for double surface graded devices, enhancing the cell’s Voc. In compositionally graded devices, the free-carrier density in the absorber’s bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band.

Reducing absorber layer thickness below 500nm in regular Cu(In,Ga)Se-2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. (c) 2014 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd. B. Vermang acknowledges the financial support of the European Commission via FP7 Marie Curie IEF 2011 Action No. 300998. Furthermore, this work is partly funded by the Swedish Science Foundation (VR) and the Swedish Energy Agency. Lastly, F. Henry would like to thank the European and Wallonia Region FEDER grant ECP12020011678F (MINATIS Project) for financial support.

Atomic layer deposition (ALD) of thin Al2O3 (≤10 nm) films is used to improve the rear surface passivation of large-area screen-printed p-type Si passivated emitter and rear cells (PERC). A blister-free stack of Al2O3/SiOx/SiNx is developed, leading to an improved back reflection and a rear recombination current (J0,rear) of 92 ± 6 fA/cm2. The Al2O3/SiOx/SiNx stack is blister-free if a 700°C anneal in N2 is performed after the Al2O3 deposition and prior to the SiOx/SiNx capping. A clear relationship between blistering density and lower open-circuit voltage (VOC) due to increased rear contacting area is shown. In case of the blister-free Al2O3/SiOx/SiNx rear surface passivation stack, an average cell efficiency of 19.0% is reached and independently confirmed by FhG-ISE CalLab. Compared with SiOx/SiNx-passivated PERC, there is an obvious gain in VOC and short-circuit current (JSC) of 5 mV and 0.2 mA/cm2, respectively, thanks to improved rear surface passivation and rear internal reflection. Copyright © 2012 John Wiley & Sons, Ltd.

This Letter discusses an important difference between positively charged SiO2 and negatively charged Al2O3 rear-passivated p-type Si solar cells: their illumination level dependency. For positively charged SiO2 rear-passivated p-type Si solar cells, a loss in short circuit current (JSC) and open circuit voltage (VOC) as a function of illumination level is mainly caused by parasitic shunting and a decrease in surface recombination, respectively. Hence, the relative loss in cell conversion efficiency, JSC, and VOC as a function of the illumination level for SiO2 compared to Al2O3 rear-passivated p-type Si solar cells has been measured and discussed. Subsequently, an exponential decay fit of the loss in cell efficiency is applied in order to estimate the difference in the energy output for both cell types in three different territories: Belgium (EU), Seattle and Austin (US). The observed trends in the difference in energy output between both cells, as a function of time of the year and region, are as expected and discussed. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Surface passivation of Si solar cells is typically achieved by deposition of a dielectric layer. Via the investigation of Al2O3 passivation layers, we show that care must be taken when performing capacitance–voltage (C –V) measurements in order to obtain results that are meaningful at solar cell level. The passivation properties of a dielectric are not only affected by post-deposition treatments but also by the presence and the nature of a metal covering the dielectric. Consequently, this Letter emphasizes how important it is to perform C –V measurements on a device structure that resembles as closely as possible that of the finished solar cell, using the same metal, deposition technique and thermal budget. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

In this study, an ultra-thin MoO3 layer synthesized by a solution-based technique is introduced as a promising interfacial layer to improve the performance of kesterite Cu2ZnSnSe4 (CZTSe) solar cell. Solar cells with 10 nm of MoO3 between Mo rear contact and CZTSe had larger minority carrier life time and open-circuit voltage compared to the reference solar cells. Temperature dependent current density–voltage measurement indicated that the activation energy (EA) of the main recombination is higher (∼ 837 meV) in solar cells with MoO3 layer, as compared to conventional solar cells where EA ∼ 770 meV, indicating reduced interface recombination. A best efficiency of 7.1% was achieved for a SLG/Mo/MoO3/CZTSe/CdS/TCO solar cell compared to the reference solar cell SLG/Mo/CZTSe/CdS/TCO for which 5.9% efficiency was achieved.