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InBi0.85Sb0.15 single crystals have been grown by zone-melting method. The growth velocity was 0.8 cm/h and the freezing interface temperature was 35 °C/cm. A Vickers' projection microscope was used for the study of micro hardness of the crystals. Hardness tests were carried out on the as-cleaved, cold-worked and annealed surfaces of the crystals. The effect of perfection of crystals on micro hardness with respect to the cold-worked, as-cleaved and annealed crystals have been studied and the results are reported.

SnSe and SnS have been grown by Bridgman- Stockbarger method. Loading time as a function of vickers microhardness has been measured at different temperatures in the range 303 K to 388K. Al measurement of hardness have been carried out on the cleavage planes. The activation energy for creep has been evaluated to be 2.92 and 1.75 K Cal/mole, respectively, for SnSe and SnS crystals.

Temperature dependence of Vickers microhardness of lnx Bi2-x Te3 single crystals with x ranging from 0.1 to 0.5 has been studied. Loading time dependence of microhardness at different temperatures has been used for creep study in the temperature range 300 K to 400 K. The activation energy for indentation creep of the crystals has been evaluated.