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3. Thermoelectric Device Based on Vertical Silicon Nanowires for On-Chip Integration

Author

Zhen Wang, Mingliang Zhang, An Ji, Yang Yang Qi, Fuhua Yang, and Xiaodong Wang

Subjects
Materials science, Annealing (metallurgy), business.industry, Mechanical Engineering, Temperature gradient, Mechanics of Materials, Electromagnetic coil, Electrode, Thermoelectric effect, Electronic engineering, Optoelectronics, General Materials Science, Resistance thermometer, Inductively coupled plasma, business, Electron-beam lithography
Abstract

A fabricating process of prototype thermoelectric device based on vertical silicon nanowires (SiNWs) for on-chip integration was presented. The SiNWs with diameter of 200 nm and height of 1 μm were fabricated by electron beam lithography and inductively coupled plasma etching. The gaps between the NWs were filled by the spin-on glass, which isolated the top and bottom electrodes. A serpentine platinum resistance thermometer coil was formed on the NWs to create temperature gradient across the NWs and measure the temperature of the top of NWs. I-V characteristics of the vertical device before and after annealing were measured. The nonlinear I-V curves were obtained, but the annealed one demonstrated 1000-fold reduction in resistance than the unannealed one.

Published
2014
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