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Tribological properties of ceramic cutting tool materials in contact with wood based materials were studied in this paper by examining how Al2O3-ceramics and Si3N4-ceramics behave in dry sliding experiment in contact with wood-based materials and by comparing their behavior with tungsten carbide material at the same time. It had been found that the ceramics exhibited much better tribological properties than tungsten carbide material, and Si3N4-ceramic performed better than Al2O3-ceramics. The Al2O3-ceramics with an addition of ZrO2 had better tribological performance than the common Al2O3-ceramics in contact with wood-based materials. The tungsten carbide had better tribological performance than ceramics in tribological contact with wood flour/PE material. A well-marked difference occurred in various cutting materials/MDF frictional pair, but the differences in various cutting materials/PB frictional pair were insignificant. An increase of the normal force didn’t result in any significant decrease of the friction coefficient. An addition of ZrO2 in the Al2O3-ceramics could inhabit corrosive wear.

Chemical mechanical polishing (CMP) has become the most widely used planarization technology in the metal and hard-brittle crystal substrate manufacturing process. In this paper, the distinguish method of lubricating behavior in CMP had been analyzed in theory firstly. Then, the tests of CMP with silicon wafer and deposited copper wafer at different polishing pressure had been done. By the test results, the Stribeck curves obtained showed obvious smooth. But in normal CMP conditions, the friction coefficient of polishing area was above 0.1. By analyzing the experimental results, it was concluded that the lubrication state in CMP interface is belong to the boundary lubrication and the material removal is the process of bringing and removed of the chemical reaction boundary lubricating film on hard-brittle crystal substrate surface constantly. The contact form between the workpiece and the polishing pad is the solid-solid contact. These results will provide theoretical guide to further understand the material removal mechanism of in hard-brittle crystal substrate CMP.