1. High-speed growth of CsSr1-xEuxI3 (x = 003, 005, 007) single crystals by the edge-defined film-fed growth method
- Author
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Jiyang Wang, Lintao Liu, Hang Wen, Qian Yao, Qingbo Wang, Weimin Dong, and Jing Li
- Subjects
Scintillation ,Materials science ,Analytical chemistry ,Gamma ray ,Crystal growth ,02 engineering and technology ,Raw material ,021001 nanoscience & nanotechnology ,01 natural sciences ,Crystallographic defect ,Electronic, Optical and Magnetic Materials ,010309 optics ,Crystal ,Temperature gradient ,0103 physical sciences ,Growth rate ,0210 nano-technology - Abstract
CsSrI3:3%Eu (Φ10×55mm), CsSrI3:5%Eu (Φ10×50mm) and CsSrI3:7%Eu (Φ10×45mm) single crystals have been successfully grown by the edge-defined film-fed growth method for the first time, with the growth rate reaching 10-20mm/h. We designed a crystal growth device that achieved the first growth of this binary scintillation crystal by the EFG method. The raw material purification, temperature gradient of experimental device and growth rate, which are the effect factors of crystal quality, were systematically investigated. Moreover, the effect of Eu2+ concentration on optical properties were studied. The Eu2+ 5d-4f emission band was observed at 450-455nm, and the PL decay time was determined as 1.32µs for CsSrI3:3%Eu, 1.35µs for CsSrI3:5%Eu and 0.73µs for CsSrI3:7%Eu.
- Published
- 2019