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In this study, we designed a signal processing module using a radiation hardened technology that can be applied to the all measurement sensors inside nuclear power plant containment. Also, for verification that it can be used for high-level radiation environment (Harsh environmental zone inside containment of NPP), we carried out evaluation tests for a designed module using a Co60 gamma-ray source up to 12 kGy(Si). And, we had checked radiation hardening level that it has been satisfied up to 12 kGy(Si).

In this paper, we propose the fast and efficient detection method using the continuous measurement technique for the gamma-ray signal acquisition. This method is improved than the conventional method for the getting information of the radiation distribution. First, we implement the stereo radiation detection system using gamma-ray sensors and the motion controller. We apply continuous measurement technique to the gamma-ray detector and conduct gamma-ray irradiation test for the comparison of detection techniques. The results show that the continuous measurement technique has the high efficient performance than the conventional method.Key Words : Fast gamma detector, Scintillation detector, Gamma-ray detection, Gamma Imager†Corresponding Author : Dept. of Nuclear convergence Techcnology Development, Korea Atomic Energy Research Institute, Korea.E-mail: yghwang@kaeri.re.kr*Dept. of Nuclear convergence Techcnology Development, Korea Atomic Energy Research Institute, Korea.Received : July 31, 2014; Accepted : August 26, 2014

In this paper, a design of high-speed power-off circuit and analysis. The incidence of high-dose transient radiation into the silicon-based semiconductor element induces the photocurrent due to the creation of electron-hole pairs, which causes the upset phenomenon of active elements or triggers the parasitic thyristor in the element, resulting in latch-up. High speed power-off circuit was designed to prevent burn-out of electronic device caused by Latch-up. The proposed high speed power-off circuit was configured with the darlington transistor and photocoupler so that the power was interrupted and recovered without the need for an additional circuit, in order to improve the existing problem of SCR off when using the thyristor. The discharge speed of the high speed power interruption circuit was measured to be 19 ㎲ with 10 ㎌ and 500 Ω load, which was 98% shorter than before (12.8 ㎳).

The electronic equipment which is exposed to high level pulsed radiation is damaged by Upset, Latchup, and Burnout. Those damages come from the instantaneous photocurrent from electron-hole pairs generated in itself. Such damages appear as losses of a power in military weapon system or as a blackout in aerospace equipment and eventually caused in gross loss of national power. In this paper, we have implemented a RDC(Radiation detection and control module) as a part of the radiation protection technology of the electronic equipment or devices from the pulsed gamma radiation. The RDC, which is composed of pulsed gamma-ray detection sensor, signal processors, and pulse generator, is designed to protect the an important electronic circuits from the a pulse radiation. To verify the functionality of the RDC, LM118s, which had damaged by the pulse radiation, were tested. The test results showed that the test sample applied with the RDC was worked well in spite of the irradiation of a pulse radiation. Through the experiments we could confirm that the radiation protection technology implemented with the RDC had the functionality of radiation protection for the electronic devices.

Transient radiation is emitted during a nuclear explosion and causes fatal errors as upset and latch-up in CMOS circuits. This paper proposes the transient radiation SPICE models of NMOS, PMOS, and INVERTER based on the transient radiation analysis using TCAD (Technology Computer Aided Design). To make the SPICE model of a CMOS circuit, the photocurrent in the PN junction of NMOS and PMOS was replaced as current source, and a latch-up phenomenon in the inverter was applied using a parasitic thyristor. As an example, the proposed transient radiation SPICE model was applied to a CMOS NAND circuit. The CMOS NAND circuit was simulated by SPICE and TCAD using the 0.18um CMOS process model parameter. The simulated results show that the SPICE results were similar to the TCAD simulation and the test results of commercial CMOS NAND IC. The simulation time was reduced by 120 times compared to the TCAD simulation.

To simulate the effect of high dose-rate radiation on semiconductor devices, device modeling work has been performed especially in the area of photo-current generation by a PIN diode. The resultant analytical values were compared with experimental ones that were specially designed and performed to benchmark the simulation results. Initial results showed 27.85% error between the simulation and the experiment. The error can be further reduced by improvement both in simulation and in related experiments. The developed technique from the study can be applicable to radiation dosimetry and to analysis on the radiation effects in electronics.

In this paper, proposed NED(nuclear event detectors) for detection of a transient radiation. Nuclear event detector was blocked of power temporary for defence of critical damage at a electric device when a induced transient radiation. Conventional NED consist of BJT, resistors and capacitors. The NED supply voltage of 5V and MCM(Multi Chip Module) structures. The proposed NED were designed for low supply voltage using 0.18um CMOS process. The response time of proposed NED was 34.8ns. In addition, pulse radiation experiments using a electron beam accelerator, the output signal has occurred.

In this study, we carried out transient radiation test for identify failure situation by a transient radiation effect on operational amplifier devices. This experiments were carried out using a 60 MeV electron beam pulse of the LINAC(Linear Accelerator) facility in the Pohang Accelerator Laboratory. In this test, we has found that a serious failure as a burn-out effect due to overcurrent on the partial electronic devices.

Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit.. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.Key Words : CMOS, TCAD, Latch-up, Transient Radiation Effects (TRE)† 교신저자, 정회원 : 전북대학교 전자공학부 부교수 공학박사E-mail : kiee@kiee.or.kr *비 회 원 : 전북대학교 전자공보공학부 박사과정한국원자력연구원 고급전문인력** 정 회 원 : 한국원자력연구원 책임연구원***정 회 원 : 한국과학기술원 박사과정 접수일자 : 2011년 9월 27일 최종완료 : 2012년 1월 31일