25 results on '"Lin, Y.C."'
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2. High-performance E-mode recessed GaN Power MIS-HEMT with La-silicate gate insulator
3. Investigation of the Interface Stability of the Metal/HfO2/AlN/InGaAs MOS Devices
4. RF Power Characteristics of the AlGaN/GaN HEMTs with Molecular Beam Deposition CeO2 as Gate Insulator
5. High Performance Tri-Gate AlGaN/GaN Power HEMTs
6. Enhanced-Mode InAs QWFETs with the Source Connected Field Plate Technique for Low Power Logic Applications
7. High Performance Enhancement-mode Al2O3/AlGaN/GaN MIS-HEMT Using Standard Fluorine Ion Implantation and Partial-gate-recess
8. InAs Quantum-Well MOSFET Performance Improvement by Using PEALD AlN Passivation Layer and In-Situ NH3 Post Remote-Plasma Treatment
9. Epitaxial Growth of Bi2Te3 Topological Insulator Thin Films with Persistent Linear Magnetoresistance Behaviors
10. Effective Interface Passivation by In-Situ Remote-Plasma Gas Treatments for In0.53Ga0.47As MOSFET and FinFET Applications
11. Characterization and Topological Properties of Bi2Se3 Thin Film Grown by using Physical Vapor Deposition
12. The Effects of AlN Passivation Layer to Metal Work-Function and Band Alignment of Metal Oxide Semiconductor Devices
13. Study of AlGaN/GaN Tri-Gate HEMTs for Device Performance Improvement
14. Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO2/La2O3 Gate Insulator for High Power Application
15. Low Interface Trap Density in In0.53Ga0.47as Metal-Oxide-Semiconductor Capacitors with Molecular Beam Deposited HfO2/ La2O3 High-κ Dielectrics
16. Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La2O3/SiO2 Gate Dielectric
17. Impact of in situ Plasma Enhanced Atomic Layer Deposition on the Electrical Properties of HfO2/In0.53Ga0.47As MOSCAPs for Low EOT and Low Interface State Densit
18. "Improving Performance of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors using in situ Post Remote-Plasma Treatment with N2/H2 Gases
19. Evaluation of InAs HEMT with Non-alloyed Ohmic Contacts & Mesa Sidewall Etch for RF and Low-Power Logic Applications
20. Influence of Rhenium on the Structural and Optical Properties of Molybdenum Disulfide
21. Study of HfO2/AlGaN/GaN MOS-HEMT for High Power Application
22. A New Lateral Conductive Bridge Random Access Memory (L-CBRAM) by Fully CMOS Logic Compatible Process
23. On the electrical characteristics of the atomic layer deposition Al2O3/In0.53Ga0.47As MOSCAPs with various annealing processes
24. On-wafer Nonlinear Behavior Modeling Technology for High Power GaN HEMTs Using Load-dependent X-parameters
25. Growth of InAs Channel HEMT Structure on Si substrate and It's Possible Application for Low Power Logic
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