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Your search keyword '"Hiromi Yamauchi"' showing total 16 results
Start Over Author "Hiromi Yamauchi" Publisher the japan society of applied physics
16 results on '"Hiromi Yamauchi"'

1. Bias Temperature Instability in Tunnel FETs

Author

M. Masahara, Koichi Fukuda, Yukinori Morita, Y. X. Liu, Hiroyuki Ota, Shin-ichi O'uchi, Junichi Tsukada, Shinji Migita, Yasuaki Ishikawa, Wataru Mizubayashi, K. Endo, Takahiro Mori, Hiromi Yamauchi, and Takashi Matsukawa

Subjects
Materials science, Temperature instability, Nanotechnology, Engineering physics
Published
2016
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2. Comparative Study of Floating Gate Type 3D Fin-Channel Flash Memories with Different Channel Shapes and Interpoly Dielectric Layers

Author

Hiroyuki Ota, S. Migita, Y.X. Liu, W. Mizubayashi, M. Masahara, T. Nabatame, N. Nguyen, T. Chikyow, Junichi Tsukada, Takashi Matsukawa, Kazuhiko Endo, Y. Morita, Shin-ichi O'uchi, Yoshie Ishikawa, and Hiromi Yamauchi

Subjects
Flash (photography), Materials science, business.industry, Gate dielectric, Electronic engineering, Optoelectronics, Dielectric, business, Communication channel, Fin (extended surface)
Published
2014
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3. Heated Ion Implantation Technology for High Performance SOI FinFETs

Author

Hiroyuki Ota, Takashi Matsukawa, M. Masahara, H. Onoda, Junichi Tsukada, Kazuhiko Endo, Yoshie Ishikawa, Wataru Mizubayashi, Y. Nakashima, Yukinori Morita, Y.X. Liu, Shin-ichi O'uchi, Hiromi Yamauchi, and Shinji Migita

Subjects
Ion implantation, Materials science, business.industry, Silicon on insulator, Optoelectronics, business
Published
2014
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4. Influence of work function variation in a metal gate on fluctuation of current-onset voltage for undoped-channel FinFETs

Author

Hiroyuki Ota, Hiromi Yamauchi, Wataru Mizubayashi, M. Masahara, Shin-ichi O'uchi, Shinji Migita, Yoshie Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yukinori Morita, Y. X. Liu, and Junichi Tsukada

Subjects
Materials science, business.industry, Optoelectronics, Nanotechnology, Work function, Current (fluid), business, Voltage, Communication channel
Published
2013
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5. Experimental Study of 3D Fin-Channel Charge Trapping Flash Memories with TiN Metal and Poly-Si Gates

Author

Shin-ichi O'uchi, Yoshie Ishikawa, Y. X. Liu, Shinji Migita, Junichi Tsukada, Wataru Mizubayashi, Takashi Matsukawa, M. Masahara, Hiromi Yamauchi, Hiroyuki Ota, Kazuhiko Endo, and Yukinori Morita

Subjects
Materials science, business.industry, chemistry.chemical_element, Nanotechnology, Charge (physics), Trapping, Fin (extended surface), Metal, Flash (photography), chemistry, visual_art, visual_art.visual_art_medium, Optoelectronics, Tin, business, Communication channel
Published
2013
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6. Performance and Variability Comparisons between ALD- and PVD-TiN Gate FinFET

Author

Y. X. Liu, Atsushi Ogura, M. Masahara, Hiroyuki Ota, T. Kamei, Wataru Mizubayashi, Junichi Tsukada, Yukinori Morita, Shinji Migita, Daisuke Kosemura, T. Hayashida, K. Endo, Yasuaki Ishikawa, Hiroki Hashiguchi, Hiromi Yamauchi, Takashi Matsukawa, and Shin-ichi O'uchi

Subjects
Materials science, chemistry, chemistry.chemical_element, Nanotechnology, Tin
Published
2011
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11. Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes

Author

Kazuhiko Endo, Eiichi Suzuki, Hiromi Yamauchi, Yongxun Liu, Meishoku Masahara, Kenichi Ishii, Junichi Tsukada, and Takashi Matsukawa

Subjects
Materials science, Physics and Astronomy (miscellaneous), Annealing (metallurgy), Diffusion, Transistor, General Engineering, Analytical chemistry, General Physics and Astronomy, Nanotechnology, law.invention, Stack (abstract data type), law, Work function, Thermal stability, Flat band, Metal gate, Layer (electronics)
Abstract

Dual metal gate technology using a combination of Mo and a Ta/Mo stack suitable for fully depleted silicon-on-insulator (FD-SOI) and double-gate (DG) transistors applicable to a gate-first process has been investigated. The annealing of the Ta/Mo stack at 600–700 °C induces the diffusion of Ta into the Mo layer, and different work functions between the single Mo layer and Ta/Mo stack gates are successfully obtained. The sputtered Mo gate exhibits a higher thermal stability than the e-beam-evaporated Mo gate. The difference in flatband voltage (0.31 V) between the Mo and Ta/Mo gates is ensured even after annealing at 850 °C for 20 s, by which subsequent source/drain activation can be carried out.

Published
2006
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