31 results on '"Akasaka, Y."'
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2. High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate
3. Systematic studies on Fermi level pining of Hf-based high-k gate stacks
4. Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
5. Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process
6. Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures ? Remarkable Advantages of La2O3 over HfO2 ?
7. First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO2 interfaces
8. Material Selection for the Metal Gate/High-k Transistors
9. Impact of Thermal Budget Reduction on MOSFET Performance to Achieve High-speed and High-density DRAM-based System LSI
10. Surface Channel Metal Gate CMOS with Light Counter Doping and Single Work Function Gate Electrode
11. Proximity Gettering of Micro-Defects by High Energy Ion Implantation
12. Formation of PZT Films by MOCVD
13. Deposition of Polycrystalline Silicon by Rapid Thermal CVD and Its Application to Direct Contact to TiSi2
14. Contact Plug Formed with Chemical-Vapour-Deposited TiN
15. Hot Carrier Effect of AC Stress on P-MOSFETs
16. Characteristics of Junction Leakage Current of Buried Layer Formed by High Energy Ion Implantation
17. Improvement of the Laser-Recrystallized SOI Structure by a New Crystal Growth Mode
18. In-situ Monitoring of Surface Process by Photo-emitted Electron in Photo-processing Systems
19. Blanket CVD-W Formed by SiH4 Reduction of WF6 on TiN for Planar Interconnection
20. Orientation Control of SOI Film by Laser Recrystallization
21. Deposition of PSG Film by Photo-CVD
22. Effect of Grain Boundaries on the I-V Characteristics of P-Channel MOSFET/SOI
23. Vertically Integrated MOS Devices with Double Active Layers
24. MeV-Boron Implanted Buried Barrier for Soft Error Reduction in Megabit DRAM
25. Arsenic Implanted Emitter and Its Application to UHF Power Transistor
26. A New Transistor Structure for High Speed Bipolar LSI
27. Recrystallization of Silicon Film on Nitride/Oxide double Insulating Structure by CW Laser Irradiation
28. Evaluation and Control of Grain Boundaries in Laser-Recrystallized Polysilicon Island for Device Fabrication
29. Performance Improvement in Fully Depleted Thin Film SOI MOSFETs
30. Application of Diffusion from Implanted Polysilicon to Bipolar Transistors
31. Anomalous Enhancement of Etching Rate of Silicon Nitride with HF Etchant by Ion Implantation
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