21 results on '"Sze, Simon"'
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2. Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes
3. Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1−xO2and HfO2/Metal Gate Stacks
4. The Effect of Silicon Oxide Based RRAM with Tin Doping
5. Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices
6. Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
7. Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
8. Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications
9. Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi[sub 2] Nanocrystals Nonvolatile Memory
10. Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
11. High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO[sub 2] Pellets for the Nonvolatile Memory Device Application
12. Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
13. Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
14. Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
15. Formation of Mo Silicide Nanodot Memory by Rapid Thermal Annealing Dual Electron-Gun Evaporated Mo–Si Layer
16. Formation of Germanium Nanocrystals Embedded in a Silicon-Oxygen-Nitride Layer
17. Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation
18. A Fabrication of Germanium Nanocrystal Embedded in Silicon-Oxygen-Nitride Layer
19. Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer
20. Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment
21. Improvement of Post-Chemical Mechanical Planarization Characteristics on Organic Low k Methylsilsesquioxane as Intermetal Dielectric
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