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A flat panel image sensor with a simple structure, which contains only one a-Si:H TFT and a storage capacitor in each pixel, has been proposed. Instead of utilizing external voltage supply, a feedthrough voltage caused by parasitic capacitance of TFT was applied to extract the photogenerated charges in a-Si:H thin film. Decrease of feedthrough voltage owing to the photoleakage current during the transient time caused by gate pulse distortion was estimated to be less than 10%. A 3.8-inch prototype image sensor was fabricated, and sensor operation with 3-4bit still and motion image was successfully obtained. The possibility of high-aperture-ratio LCD with embedded image sensor has been shown.

Non-piezoelectric inkjet printing methods, namely, ultrasonic inkjet printing and electrostatic inkjet printing have been used for fabricating an all-solution-processed organic thin- film transistor. Silver nanoparticle ink is patterned to form source/drain electrodes using the electrostatic inkjet method and high-viscosity poly(3,4-ethylenedioxythiophene) doped poly (styrene sulfonate) (PEDOT:PSS) was patterned as a gate electrode using ultrasonic inkjet printing. Polymer insulator and polymer semiconductor are spin-coated as a gate dielectric layer and a semiconductor layer, respectively. This is the first fabrication of all-solution-processed organic transistor using non-piezoelectric inkjet printing.

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