40 results on '"Shiraishi, Kenji"'
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2. Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO2 Related High-k Dielectrics Interfaces
3. Asymmetric Distribution of Charge Trap in HfO2-Based High-k Gate Dielectrics
4. Role of the Ionicity in Defect Formation in Hf-Based Dielectrics
5. Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics
6. Vacancy-Type Defects in MOSFETs with High-k Gate Dielectrics Probed by Monoenergetic Positron Beams
7. Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electrodes on HfSiON by Employing Ru Gate Electrodes
8. Microscopic Understanding of PBTI and NBTI Mechanisms in High-k / Metal Gate Stacks
9. Theoretical Studies on Metal/High-k Gate Stacks
10. Tight Distribution of Dielectric Characteristics of HfSiON in Metal Gate Devices
11. Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS
12. Effect of Annealing on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process
13. Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-k Gate Stacks
14. (Invited) Atomistic Guideline for MONOS-Type Memories with High Program/Erase Cycle Endurance
15. Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices
16. Control of Gate Metal Effective Work Functions and Interface Layer Thickness by Designing Interface Thermodynamics Based on Heteroatom Incorporation into High-k HfO2 Gate Dielectrics
17. (Invited) Negatively Charged Defects Generated by Rare-Earth Materials Incorporation into HfO2 and the Impact on the Gate Dielectrics Reliability
18. (Invited) Degradation in HfSiON Film Induced by Electrical Stress Application
19. Investigation of the New Physical Model of Ohmic Contact for Future Nanoscale Contacts
20. Electron Tunneling Between Si Quantum Dots and Two Dimensional Electron Gas under Optical Excitation at Low Temperatures
21. Si Nanowire FET Technology
22. (Invited) Efficient Guiding Principle of Highly Scalable MONOS-Type Memories
23. Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN
24. (Invited) First Principles and Themodynamical Studies on Matel Organic Vaper Phase Epitaxy of GaN
25. First Principles Study on the Strain Dependence of Thermal Oxidation and Hydrogen Annealing Effect at Si/SiO2 Interface in V-MOSFET
26. (Invited) Silicon Emission Mechanism for Oxidation Process of Non-Planar Silicon
27. (Invited) The Interplay between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices
28. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces
29. Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires
30. Effect of Heteroatom for Nitrogen Vacancy in SiN/SiO2 Interface Layer in MONOS-Type Memories
31. Physics of Nano-contact between Si Quantum Dots and Inversion Layer
32. Electronic Structure Analysis of Silicon Nanowires for High Conductivity in n- and p-channel Nanowire-FET
33. Generation of Acceptor Levels in Ge by the Uniaxial Strain - A Theoretical Approach
34. Photoemission Study of Metal/HfSiON Gate Stack
35. Relation between Solubility of Silicon in High-k Oxides and the Effect of Fermi Level Pinning
36. Theory of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-
37. Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices
38. Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures - Remarkable Advantages of La2O3 over HfO2 -
39. Physics of Metal/High-k Interfaces
40. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces
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