1. Enhanced Mobility of Rubrene Thin-Film Transistors with a Polymer Dielectric on Plastic Substrate
- Author
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D. K. Hwang, Seongil Im, Jeong M. Choi, Seong Hun Jeong, and Se W. Park
- Subjects
Materials science ,General Chemical Engineering ,Gate dielectric ,Oxide ,Dielectric ,Substrate (electronics) ,Amorphous solid ,chemistry.chemical_compound ,chemistry ,Chemical engineering ,Thin-film transistor ,Phase (matter) ,Electrochemistry ,General Materials Science ,Electrical and Electronic Engineering ,Physical and Theoretical Chemistry ,Rubrene - Abstract
We report on the fabrication of rubrene thin-film transistors (TFTs) with spin-coated poly-4-vinylphenol (PVP) dielectric on indium-tin oxide/plastic substrate. Under a specific growth condition of 80°C in situ vacuum anneal following thermal deposition, initial amorphous rubrene film was successfully transformed into crystalline phase, both on hydrophobic PVP and on SiO 2 /p + -Si substrate, whose surface is relatively hydrophilic. The transformation or growth kinetics of the crystalline rubrene domain was much faster on PVP than on the SiO 2 gate dielectric. As a result, the rubrene TFT with PVP dielectric exhibited an order of magnitude higher field mobility (∼6 × 10 -3 cm 2 /V s) than that of the other one with SiO 2 dielectric.
- Published
- 2007
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