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Very large scale integration (VLSI), complementary metal on oxide semiconductor (CMOS) compatible piezoelectric materials such as AlN have great potential for applications as miniature bandpass filters. The AlN film quality strongly determines the figures of merit for such devices. For device integration into a VLSI CMOS process with Al electrodes, a low‐temperature deposition technique is necessary. A direct current (dc) magnetron sputtering system was reconstructed to deposit high‐quality, polycrystalline AlN films on Si and Al substrates at temperatures of approximately 150°C. X‐ray diffraction rocking curves of 2.3° on Si substrates and 5.7° on thin‐film Al substrates were achieved. Due to the relatively low deposition rates and the required low deposition temperature, the AlN film quality was found to be limited by the oxygen content within the film. For a deposition rate of 1 μm/h and a deposition temperature of 150°C, the partial pressure of oxygen‐containing species must be less than approximately Torr for such narrow rocking curve material. The amount of oxygen contamination is dependent on various system‐ and process‐related factors such as the deposition rate, deposition temperature, base pressure, oxygen and moisture partial pressure, target purity, and gas purity. Therefore, the AlN film quality is strongly system dependent. All films were tensile in nature, with stresses of 300–600 MPa for 1 μm films on either substrate. Minimal stress control was possible with the dc magnetron source. © 1999 The Electrochemical Society. All rights reserved.

Nitruration de couches SiO 2 dans NH 3 ambiant ou dans un plasma de NH 3 entre 925°C et 1050°C pendant moins de 2 heures. Determination de la composition des couches et hypothese sur la cinetique de la reaction. Fabrication de condensateurs et de TEC MOS a canal n sur les couches d'oxyde nitrurees. Etude des effets de la nitruration sur les caracteristiques interfaciales