1. Comparison of Electromigration in Cu Interconnects with Atomic-Layer- or Physical-Vapor-Deposited TaN Liners
- Author
-
Chenming Hu, Stephan Grunow, James J. Demarest, S. L. Liew, Lynne Gignac, B. Redder, A. Simon, and Eric G. Liniger
- Subjects
Materials science ,Renewable Energy, Sustainability and the Environment ,Diffusion ,Copper interconnect ,Analytical chemistry ,Activation energy ,Dielectric ,Condensed Matter Physics ,Electromigration ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Materials Chemistry ,Electrochemistry ,Grain boundary ,Layer (electronics) - Abstract
Electromigration in 0.07 μm wide Cu interconnections has been investigated for sample temperatures from 213 to 300°C. The effect of atomic-layer- or physical-vapor-deposited TaN x and physical-vapor-deposited Ta liner layers in Cu damascene lines on electromigration was also studied. A lower lifetime and activation energy for electromigration was observed in tested lines with sidewall voids. Similar electromigration lifetime and activation energy observed from samples with either atomic-layer- or physical-vapor-deposited TaN, suggested that the dominant diffusion paths in the Cu lines were not sensitive to the TaN x layer and were along the Cu/dielectric interface and/or grain boundaries.
- Published
- 2007
- Full Text
- View/download PDF