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ZnO thin films were deposited on SiO2/Si(100) and single-crystal MgO substrate using pulsed laser deposition. High-quality ZnO thin films were fabricated on both substrates successfully. Interdigital transducer-shaped Al electrodes were used for measuring electrical properties. Electrical current as a function of voltage, temperature-dependent I-V, and impedance of ZnO thin films were measured. ZnO thin films on MgO substrate show ohmic behavior. On the other hand, ZnO thin films on SiO2/Si(100) substrate show good thermal stability but Schottky-like diode behavior. [ABSTRACT FROM AUTHOR]

A modification of liquid source misted chemical deposition process (LSMCD) with heating mist and substrate has developed, and this enabled to control mist penetrability and fluidity on sidewalls of three-dimensional structures and ensure step coverage. A modified LSMCD process allowed a combinatorial approach of Pb(Zr,Ti)O3 (PZT) thin films and carbon nanotubes (CNTs) toward ultrahigh integration density of ferroelectric random access memories (FeRAMs). The CNTs templates were survived during the crystallization process of deposited PZT film onto CNTs annealed at 650°C in oxygen ambient due to a matter of minute process, so that the thermal budget is quite small. The modified LSMCD process opens up the possibility to realize the nanoscale capacitor structure of ferroelectric PZT film with CNTs electrodes toward ultrahigh integration density FeRAMs. [ABSTRACT FROM AUTHOR]

We have found that a hafnia precursor (hafnium bis-isopropoxy bis-thd) for chemical solution deposition (CSD) yields a crystallization temperature ca . 80°C above that usually found for CSD film deposition (e.g., 521°C for Hf-butoxide). These results are considered in terms of two models: the coordination oligomerism model of Turova and Yanovskaya, and a model of competing surface assembly mechanisms from monomeric precursors; although both are compatible with Raman data on film crystallisation temperatures, DTA/TG results on bulk samples support the competing surface assembly model, as do differing values of surface roughness for the different precursors. Implications for commercial production of hafnia gate oxides capable of withstanding conventional FET front-end processing are emphasised. [ABSTRACT FROM AUTHOR]