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By using the six sets of interatomic potentials for face-centred cubic metals that differ in the stacking fault energy (SFE) while most of the other material parameters are kept almost identical, we conducted molecular dynamics simulations to evaluate the effects of SFE on the defect formation process through collision cascades. The simulations were performed at 100, 300 and 600 K, with a primary knock-on atom energy of 50 keV. The number of residual defects is not dependent on the SFE at all the temperatures. For clusters of self-interstitial atoms (SIAs), their clustering behaviour does not depend on the SFE, either. However, the ratio of glissile SIA clusters tends to decrease with increasing SFE. This is because perfect loops, the edges of which split into two partial dislocations with stacking fault structures between them in most cases, prefer to form at lower SFEs. The enhanced formation of glissile SIA clusters at lower SFEs can also be observed even at increased temperature. Because most large vacancy clusters have stacking fault structures, they preferentially form at lower SFE; however, it is observed only at the lowest temperature, where the mean size increases with decreasing SFE. At higher temperatures, because of their extremely low number density, the vacancy clustering behaviour does not depend on the SFEs. [ABSTRACT FROM AUTHOR]

Coarse, rod-shaped precipitates growing along ⟨100⟩Al directions in an Al–1.0 wt% Mg2Si alloy with 0.5 wt% Ag additions were investigated by high-resolution high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). All investigated precipitates had complex structures, being composed of domains separated by anti-phase resembling boundaries. The domains consist of a modified hexagonal β′-type structure that contains a considerable amount of Ag. Based on HAADF-STEM images, an average atomic model with space group P-62 m (189) and composition Al3Mg3Si2Ag is proposed, having Al incorporation and Ag replacing certain Si atomic columns. Co-existence with the Ag-free β′-Mg9Si5 phase has been observed for some precipitates. The boundaries may be described as full or half units of the orthorhombic U2-AlMgSi precipitate phase. The HAADF-STEM images indicate partial replacements of Al atoms by Ag, in both the β′-type domains and the U2-type boundaries. Ag enrichment of the Al matrix near the precipitate/Al interface was observed for all the investigated precipitates [ABSTRACT FROM AUTHOR]