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To ensure a data retention time of e.g. 10 years a maximum allowed floating gate doping concentration can not be exceeded. The data retention time can be improved by reducing the floating gate doping concentration. This reduction causes a so far negligible depletion effect in the floating gate reducing the V T -shift by approximately 1.5 Volts at a floating gate doping of 3.1019 cm-3. A trade-off will be discussed.