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In this chapter, the RD model is described to simulate the time kinetics of interface traps. The model uses inversion layer (cold) hole induced dissociation of Hydrogen passivated interfacial defects and defect-assisted conversion of atomic into molecular species (and reverse processes) in the gate insulator bulk during (and after) stress. The model is independently validated using DCIV measured data under DC and AC NBTI stress, from planar MOSFETs with different Nitrogen content in the gate insulator and FinFETs with different Germanium content in the channel. The process dependence is explained, and the validity of the physical mechanism and model parameters are discussed.