36 results on '"Zheng, Y.D."'
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2. Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer
3. Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN heterostructures
4. Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
5. MOCVD growth and properties of ZnO films using dimethylzinc and oxygen
6. Correlation between green luminescence and morphology evolution of ZnO films
7. Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal–organic chemical vapor deposition
8. Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD
9. Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure
10. Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors
11. Optical properties of Mg-implanted GaN
12. Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors
13. Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE
14. Improvement of metal–ferroelectric–silicon structures without buffer layers between Si and ferroelectric films
15. Prepare of ZnAl2O4/-Al2O3 complex substrates and growth of GaN films
16. Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation
17. The oxidation of gallium nitride epilayers in dry oxygen
18. Impact of the device scaling on the low-frequency noise in n-MOSFETs
19. Influence of C on Ge incorporation in the growth of Ge-rich Ge 1−x−y Si x C y alloys on Si (100)
20. Fabrication of Enhancement-Mode GaN-Based Metal–Insulator-Semiconductor Field Effect Transistor
21. Structural Properties of Laterally Overgrown GaN
22. High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure
23. Oxidation of Gallium Nitride Epilayers in Dry Oxygen
24. Fabrication and Characterization of Metalferroelectric-GAN Structures
25. Growth of wurtzite GaN films on αAl 2 O 3 substrates using light-radiation heating metal-organic chemical vapor deposition
26. Influence of growth conditions on the incorporation of substitutional C in Si 1-x-y Ge x C y alloy on Si by chemical vapor deposition using C 2 H 4
27. Oxidation of Gallium Nitride Epilayers in Dry Oxygen
28. Fabrication and Characterization of Metal-Ferroelectric-Gan Structures
29. Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy
30. Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition
31. Fabrication of silicon nanowires
32. Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy
33. The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si
34. Formation of New Semiconducting Ge-Si-Fe Alloy on Si(100) and its Optical Properties
35. High-Quality Photoconductive Ultraviolet GaN/6H-SiC Detector and Its Properties
36. Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing
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