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This work reports a large controllability of domain evolution in BaTiO3 ferroelectric nanodot by isotropic surface charge screening (SCS). The phase field simulations show that the nanodot can exhibit fruitful domain patterns and evolution paths as functions of temperature and screening factor and changing direction of these two variables. Four typical types of experimental processes have been simulated, including the cooling-down and heating-up processes under fixed SCS conditions, and the processes of increasing and decreasing SCS under fixed temperatures. During these processes, the nanodot exhibits up to 13 different kinds of domain patterns, among which some are either polar or toroidal and some are both polar and toroidal. We summarized the phase diagrams as functions of temperature and charge screening factor, and also analyzed the typical domain evolution paths.

In order to demonstrate the control of BiFeO3 thin film on the resistive switching effect and achieve the high-performance resistive switching device, the single layers and bilayer have been fabricated by chemical solution deposition method, respectively. In comparison with the single films, the composite film exhibits great performance of the resistive switching in endurance and repeatability, high stability and resistance ratio of high resistance state to low resistance state. Resistive switching effect in the BiFeO3 composite structure demonstrates an effective way to improve the endurance and repeatability of the resistive switching characteristics by designing the relative devices.