Search

Your search keyword '"Sun, Shiwen"' showing total 23 results
Start Over Author "Sun, Shiwen" Publisher springer science and business media llc
23 results on '"Sun, Shiwen"'

9. Upgraded CdZnTe Based on the Infrared Attenuation Spectrum

Author

Chao Xu, Linjun Wang, Ming Li, Sun Shiwen, Jiahua Min, Jijun Zhang, Delong Zhang, Jiaxuan Zhang, and Xiaoyan Liang

Subjects
010302 applied physics, Materials science, Solid-state physics, Annealing (metallurgy), business.industry, Infrared, Attenuation, Conduction type, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, 0103 physical sciences, Materials Chemistry, Electrical performance, Optoelectronics, Electrical and Electronic Engineering, Free carrier absorption, 0210 nano-technology, business
Abstract

According to the infrared attenuation spectrum, we can know the conduction type and major point defect of CdZnTe crystals. Based on point defect modelling, an appropriate modus of atmosphere annealing was described in this paper. In this paper, annealing with Cd pressure control technology was used to upgrade p-CdZnTe and n-CdZnTe, respectively. Characterizations reveal that the optical and electrical performance of the CZT crystals is patently improved after annealing. Employment of the infrared attenuation spectrum as the annealing guideline has been verified to be feasible and effectual in this paper.

Published
2019

11. Influence of Cd-rich Annealing on Defects in Te-rich CdZnTe Materials

Author

Zhou Changhe, Yu Huixian, Jianrong Yang, Fengfeng Sheng, and Sun Shiwen

Subjects
Crystallography, Materials science, Etch pit density, Solid-state physics, Annealing (metallurgy), Metallurgy, Materials Chemistry, Melting point, Cluster size, Dislocation multiplication, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials
Abstract

The influence of Cd-rich annealing at temperatures of 440–900 °C on the defect properties of Te-rich CdZnTe materials was studied. Cd-rich annealing at temperatures above the melting point of Te was confirmed to effectively reduce the size of Te-rich inclusions in the materials. However, dislocation multiplication occurred in the regions near Te-rich inclusions. Etch pit clusters were observed on the surfaces of annealed materials etched with Everson etchant. The etch pit clusters were much larger than the as-grown Te-rich inclusions. The dependence of the cluster size on that of the Te-rich inclusions and the annealing conditions was investigated. The density of etch pits in the normal region increased when the annealing temperature exceeded 750 °C. The mechanisms of the evolution of the Te-rich inclusions and the formation of new defects during the Cd-rich annealing are discussed.

Published
2014

12. Influences of Te-Rich and Cd-Rich Precipitates of CdZnTe Substrates on the Surface Defects of HgCdTe Liquid-Phase Epitaxy Materials

Author

Sun Shiwen, Jianrong Yang, Fengfeng Sheng, and Zhou Changhe

Subjects
Surface (mathematics), Morphology (linguistics), Materials science, Solid-state physics, business.industry, Substrate surface, Liquid phase, Substrate (electronics), Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, Dislocation, business
Abstract

Influences of Te-rich and Cd-rich precipitates of CdZnTe substrates on the surface defects of HgCdTe epilayers grown by Te-rich liquid-phase epitaxy were investigated. The results show that HgCdTe surface defects are mainly attributable to precipitates on CdZnTe substrate surfaces. At the same time, the remelting of substrate surface layers during the liquid-phase epitaxial process also affects the number and morphology of HgCdTe surface defects. According to the morphological characteristics of surface defects, three types of surface defects were observed on the surfaces of HgCdTe epilayers. There are no obvious differences in the morphologies of the surface defects grown on Te-rich and Cd-rich substrates. However, the dislocation distributions around surface defects are different for HgCdTe epilayers grown on different substrates.

Published
2014

18. Erratum to: Influence of Cd-rich Annealing on Defects in Te-rich CdZnTe Materials

Author

Jianrong Yang, Sun Shiwen, Zhou Changhe, Fengfeng Sheng, and Yu Huixian

Subjects
Materials science, Solid-state physics, Chemical engineering, Annealing (metallurgy), Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials
Published
2014

Catalog

Books, media, physical & digital resources
See catalog results