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The topic of magnetic antidot lattice (MAL) arrays has drawn attention from both fundamental research as well as from application point of view. MAL arrays are promising candidates for making domain engineering in thin films. For various applications it is necessary to understand the magnetization reversal mechanism as well as the relaxation dynamics. In this context we have studied magnetic antidot lattice (MAL) arrays of Co/Pt with perpendicular anisotropy fabricated by combination of photolithography and sputtering deposition. Kerr microscopy domain imaging for the continuous thin film reveals the formation of typical bubble domains of perpendicular media with high anisotropy. However, presence of periodic holes in the MAL arrays lead to nucleation of localised smaller bubbles. We have performed simulations using object oriented micromagnetic framework (OOMMF) which reproduced the experimental results even considering antidot arrays in nano dimension. In literature it has been reported that in MAL arrays with in-plane anisotropy the domain propagation gets significantly hindered by the presence of the holes. However here we show that in perpendicularly magnetized Co/Pt the propagation of the domain walls is not restricted by the presence of the antidots. Further we have performed magnetic relaxation study and found that the global relaxation time for the MAL arrays of Co/Pt is faster as compared to it’s parent thin film. This behavior is opposite to what has been observed in literature for in-plane magnetized MAL arrays.