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and SB steps induces a strong buckling along the rebonded dimer row in the lower terrace. On the upper terrace of the SB step, the kink induces a local p(2×2) structure directed toward the center of the step. The strains of second-layer atoms supporting the dimers are responsible for the reconstruction near the monatomic steps on the Si(001) surface.

Green's function is used in order to derive the analytical solution for the change in impedance due to a presence of the flaws in a conductor. This solution is applied to a cylindrical flaw and a spherical flaw whose radii are much smaller than the radius of the test coil. For both cases, the change in impedance is obtained within Born's limit.

The impedance of a single-turn coil which surrounds a conducting cylinder with a flaw is calculated employing Green's function technique. The Born approximation is used in order to know how the impedance change due to the presence of a flaw depends on the conductivity and size of a flaw.