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A nonplanar X-band cavity amenable to coating with high-temperature superconducting films by conventional physical vapor deposition processes has been designed, fabricated, and tested. The cavity geometry resembles a symmetric clamshell configuration. It consists of two truncated cones joined at their bases. The specific dimensions of the cavity were calculated using the SUPERFISH computer code. Cavities were constructed using a silver-based alloy, Consil 995. The separate cavity sections were coated with Tl-based high-temperature superconducting material using a two-step deposition and annealing process. The unloaded Q values for this coated clamshell cavity are 66,000 and 105,000 at 77 and 20 K, respectively.

Microwave surface resistance (R s ) measurements on large-area (11.4 cm2) Tl-based films deposited onto Ag (Consil 995) substrates have been made at a frequency of 18 GHz as a function of temperature. Deposition onto unoriented Ag substrates yields unoriented films characterized byR s values of 8.2 and 33.6 mΩ at 10.6 and 77 K, respectively. In contrast, similar deposition onto oriented Ag substrates yields oriented films with values of 12.6 and 14.6 mΩ at 11.2 and 77 K, respectively; corresponding Cu values are 9 and 21 mΩ. Additionally, it is found that the dependence ofR s on microwave surface magnetic fieldH s is weaker for the oriented films. These results suggest that the effect of orienting thec-axis in Tl films is twofold: (1) the high-frequency superconducting transition is made considerably sharper, resulting in a lowerR s value at 77 K, and (2) the rate of increase inR s with appliedH s is reduced. Both effects have significant ramifications for the potential application of these materials to high-frequency accelerating cavities.

A multi-step process is used to fabricate Tl2Ba2Ca1Cu2O8 films on (100) LaA103 substrates. Submicron thick precursor films of Ba-Ca-Cu-O are rf magnetron sputter deposited from a single target. Film stoichiometry is measured by ion beam backscattering spectroscopy. Deficiencies of the alkaline earths that are found in the precursor films are then compensated for by the addition of appropriate CaF2 and/or BaF2 films onto the surface of the precursor film. Post deposition annealing of the films is then done in an atmosphere of thallium oxide and oxygen in order to form the superconducting phases. The annealed films are examined using x-ray diffraction (XRD), an ac inductance technique, and critical current in an external magnetic field. XRD shows the c-axis length of the superconducting phase to increase as the overall film stoichiometry approaches 2212. The transition widths measured by inductive coupling weakly correlate with 77 K critical current measurements. Our best critical current results are 1.5*106 amps/ cm2 for a film measured at 4 K in an 8 T magnetic field (parallel to the films' c-axis).

The purpose of this program is to develop a new process for the fabrication of ceramic matrix composites by chemical vapor infiltration. This period has been devoted in part to the exploration of material systems suitable for MACVI processing. A number of potential processing schemes are possible using combinations of absorbing and transparent material as composite components. This includes the use of an absorbing preform (nicalon fiber) combined with a transparent matrix (silicon nitride). Composites 5 cm in diameter by 1 cm. thick have been fabricated to densities of 65% theoretical. Processing times for these materials are under 20 hours. Higher densities will require additional microwave power now possible with the new reactor. The most effective MACVI scheme will involve the use of a transparent fiber with an absorbing matrix. The hot spot will be initiated by appropriate treatment of the central region of the preform. To this end alumna fibers with pretreatments to control thermal gradients has been explored. Nextel 610 fibers have been effectively pretreated carbon coating resulting in preferential heating in the interior of the preform. Possible matrix materials include siliconized silicon carbide, doped silicon carbide, alumna and zirconia. A patent for MACVI has been issued 10/19/93.

Thin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

Low-temperature chemical vapor deposition of M(allyl)3 (M = Rh, Ir; allyl = η3 -C3H5) in the presence of H• yields thin, crystalline metal films of greater than 97% metal composition. Depositions using H2 result in the formation of materials which are amorphous and contain a significant amount of residual carbon (14%). The composition of these materials does not differ significantly from that obtained from the vacuum thermal deposition of M(allyl)3.